Xue Yuanyuan, Wang Zujun, Chen Wei, Liu Minbo, He Baoping, Yao Zhibin, Sheng Jiangkun, Ma Wuying, Dong Guantao, Jin Junshan
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China.
Sensors (Basel). 2017 Nov 30;17(12):2781. doi: 10.3390/s17122781.
Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments.
采用11微米像素间距的高动态范围像素、分辨率为400万像素的四晶体管（T） pinned光电二极管（PPD）互补金属氧化物半导体图像传感器（CIS），受到了3兆电子伏特和10兆电子伏特质子的辐照。在辐照前后测量了暗信号，辐照后的暗信号显著增加。采用一种理论方法分析辐照前后暗信号分布的退化机制。理论结果与实验结果吻合良好。该研究将有助于深入了解质子辐射对CIS的影响，并能够预测在复杂质子辐射环境下CIS的暗信号分布。
