Wong Wei Wen, Wang Naiyin, Esser Bryan D, Church Stephen A, Li Li, Lockrey Mark, Aharonovich Igor, Parkinson Patrick, Etheridge Joanne, Jagadish Chennupati, Tan Hark Hoe
Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
ACS Nano. 2023 Aug 8;17(15):15065-15076. doi: 10.1021/acsnano.3c04234. Epub 2023 Jul 14.
Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum-well heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultrasmooth cavity sidewalls. The engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.
集成片上激光器是未来光电子和纳米光子电路的关键构建模块。具体而言，具有技术相关性的III-V族材料已引起了相当大的关注。然而，传统的微腔激光器制造技术，包括自上而下的蚀刻和自下而上的催化生长，往往会导致不理想的腔几何形状，其可扩展性和可重复性较差。在此，我们利用选择性区域外延方法在单个芯片上确定性地制造数千个微环激光器。具体来说，我们在具有嵌入式多量子阱异质结构的环形腔中实现了对技术关键材料InAsP/InP的无催化剂外延生长。我们阐明了详细的生长机制，并利用在选定晶面上确定性控制吸附原子扩散长度的能力，可重复地实现超光滑的腔侧壁。所制造的器件在电信O波段表现出可调谐发射波长，并在整个芯片上显示出低阈值激光发射，器件效率超过80%。我们的工作标志着朝着为下一代高密度集成光子和光电子电路实现完全集成的III-V族材料平台迈出了重要的里程碑。
