Wang Gang, Hou Kailin, Liu Yang, Bi Huarong, Li Weibin, Xue Yan
Opt Express. 2023 Jul 3;31(14):22722-22732. doi: 10.1364/OE.493274.
The generation of squeezed light in semiconductor materials opens opportunities for building on-chip devices that are operated at the quantum level. Here we study theoretically a squeezed light source of polariton dark solitons confined in a geometric potential well of semiconductor microcavities in the strong coupling regime. We show that polariton dark solitons of odd and even parities can be created by tuning the potential depth. When driving the potential depth linearly, a bistability of solitons with the two different parities can be induced. Strong intensity squeezing is obtained near the turning point of the bistability due to the large nonlinear interaction, which can be controlled by the cavity detuning. The phase diagram of the bistability and squeezing of the dark solitons is obtained through large scale numerical calculations. Our study contributes to the current efforts in realizing topological excitations and squeezed light sources with solid-state devices.
在半导体材料中产生压缩光为构建在量子水平上运行的片上器件提供了机会。在这里,我们从理论上研究了在强耦合 regime 中限制在半导体微腔几何势阱中的极化子暗孤子压缩光源。我们表明,通过调节势阱深度可以产生奇偶性不同的极化子暗孤子。当线性驱动势阱深度时,可以诱导出具有两种不同奇偶性的孤子双稳性。由于大的非线性相互作用,在双稳性的转折点附近获得了强强度压缩,这可以通过腔失谐来控制。通过大规模数值计算得到了暗孤子双稳性和压缩的相图。我们的研究有助于当前利用固态器件实现拓扑激发和压缩光源的努力。