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半导体微柱中的极化激元产生强度压缩。

Polariton-generated intensity squeezing in semiconductor micropillars.

机构信息

Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure and CNRS, UPMC Case 74, 4 place Jussieu, 75252 Paris Cedex 05, France.

Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan.

出版信息

Nat Commun. 2014;5:3260. doi: 10.1038/ncomms4260.

Abstract

The generation of squeezed and entangled light fields is a crucial ingredient for the implementation of quantum information protocols. In this context, semiconductor materials offer a strong potential for the implementation of on-chip devices operating at the quantum level. Here we demonstrate a novel source of continuous variable squeezed light in pillar-shaped semiconductor microcavities in the strong coupling regime. Degenerate polariton four-wave mixing is obtained by exciting the pillar at normal incidence. We observe a bistable behaviour and we demonstrate the generation of squeezing near the turning point of the bistability curve. The confined pillar geometry allows for a larger amount of squeezing than planar microcavities due to the discrete energy levels protected from excess noise. By analysing the noise of the emitted light, we obtain a measured intensity squeezing of 20.3%, inferred to be 35.8% after corrections.

摘要

产生压缩和纠缠的光场是实现量子信息协议的关键要素。在这种情况下,半导体材料为实现工作在量子水平的片上设备提供了强大的潜力。在这里,我们在强耦合状态下的柱状半导体微腔中展示了一种新型的连续变量压缩光源。通过在正常入射下激发柱状结构,获得了简并极化激元四波混频。我们观察到了双稳行为,并证明了在双稳曲线的转折点附近产生了压缩。由于离散能级受到了多余噪声的保护,因此受限的柱状结构比平面微腔允许产生更大的压缩量。通过分析发射光的噪声,我们获得了测量到的强度压缩度为 20.3%,经过修正后推断为 35.8%。

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