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柔性超薄氮掺杂碳介导分级二硫化锡纳米片电极的表面电荷重新分布以实现高效电容去离子化。

Flexible ultrathin Nitrogen-Doped carbon mediates the surface charge redistribution of a hierarchical tin disulfide nanoflake electrode for efficient capacitive deionization.

作者信息

Gao Ming, Liang Wencui, Yang Zhiqian, Ao Tianqi, Chen Wenqing

机构信息

College of Architecture and Environment, Sichuan University, Chengdu 610065, China.

State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering, Sichuan University, Chengdu 610065, China.

出版信息

J Colloid Interface Sci. 2023 Nov 15;650(Pt B):1244-1252. doi: 10.1016/j.jcis.2023.07.100. Epub 2023 Jul 17.

DOI:10.1016/j.jcis.2023.07.100
PMID:37478741
Abstract

Constructing pseudocapacitive electrodes with high specific capacities is indispensable for increasing the large-scale application of capacitive deionization (CDI). However, the insufficient CDI rate and cycling performance of pseudocapacitive-based electrodes have led to a decline in their use due to the corresponding volumetric expansion and contraction that occurs during long-term CDI processes. Herein, hierarchical porous SnS nanoflakes are encapsulated inside an N-doped carbon (NC) matrix to achieve efficient CDI. Benefiting from the synergistic properties of the pseudocapacitive SnS nanoflakes and few-layered N-doped carbon, the heterogeneous interface simultaneously provides more available vigorous sites and demonstrates rapid charge-transfer kinetics, resulting in a superior desalination capability (49.86 mg g at 1.2 V), rapid desalination rate (1.66 mg g min) and better cyclic stability. Computational research reveals a work function-induced surface charge redistribution of the SnS@NC heterojunction, which can lead to an auspicious surface electronic structure that reduces the adsorption energy to improve the diffusion kinetics toward sodium adsorption. This work contributes to providing a thoughtful understanding of the interface engineering between transition metal dichalcogenides and NC to construct high-performance CDI electrode materials for further industrialization.

摘要

构建具有高比容量的赝电容电极对于扩大电容去离子化(CDI)的大规模应用至关重要。然而,基于赝电容的电极的CDI速率和循环性能不足,由于在长期CDI过程中发生相应的体积膨胀和收缩,导致其应用有所减少。在此,将分级多孔SnS纳米片封装在N掺杂碳(NC)基质中以实现高效的CDI。受益于赝电容性SnS纳米片和少层N掺杂碳的协同特性,异质界面同时提供了更多可用的活性位点,并展现出快速的电荷转移动力学,从而具有卓越的脱盐能力(在1.2 V时为49.86 mg g)、快速的脱盐速率(1.66 mg g min)和更好的循环稳定性。计算研究揭示了SnS@NC异质结的功函数诱导表面电荷重新分布,这可导致有利的表面电子结构,降低吸附能以改善对钠吸附的扩散动力学。这项工作有助于深入理解过渡金属二硫属化物与NC之间的界面工程,以构建用于进一步工业化的高性能CDI电极材料。

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