Prachamon Jirata, Sattapol Pratumwan, Chanlek Narong, Putasaeng Bundit, Phromviyo Nutthakritta, Harnchana Viyada, Swatsitang Ekaphan, Thongbai Prasit
Giant Dielectric and Computational Design Research Group (GD-CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand.
Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand.
Heliyon. 2023 Jun 7;9(6):e17048. doi: 10.1016/j.heliyon.2023.e17048. eCollection 2023 Jun.
CaCuNiTiO/CaTiO ceramic composites were fabricated using initial CaCuNiTiO compositions ( = 0, 0.05, 0.10, and 0.20) to improve the dielectric properties (DPs) of the CaCuTiO ceramics. CaCuTiO and CaTiO phases were confirmed. Microstructural analysis and Rietveld refinement showed that the Ni dopant might substitute the Cu sites of the CaCuTiO structure. The average grain sizes of CaCuTiO (4.1-5.6 μm) and CaTiO (1.2-1.4 μm) changed slightly with the Ni doping concentration. The best DPs were obtained for the CaCuNiTiO/CaTiO with = 0.2. The loss tangent was significantly reduced by an order of magnitude compared to that of the undoped composite, from tanδ∼0.161 to ∼0.016 at 1 kHz, while the dielectric permittivity slightly decreased from ε'∼5.7 × 10 to ∼4.0 × 10. Furthermore, the temperature dependence of ε' could be improved by doping with Ni. The improved DPs were caused by the enhanced electrical responses of the internal interfaces, which resulted in enhanced non-Ohmic properties. The largest nonlinear coefficient (α∼7.6) was obtained for the CaCuNiTiO/CaTiO with = 0.05. Impedance spectroscopy showed that the CaCuNiTiO/CaTiO composites consisted of semiconducting and insulating components. The DPs of CaCuNiTiO/CaTiO were explained based on the space-charge polarization at the active-interfaces.
采用初始CaCuNiTiO成分(=0、0.05、0.10和0.20)制备了CaCuNiTiO/CaTiO陶瓷复合材料,以改善CaCuTiO陶瓷的介电性能(DPs)。确认了CaCuTiO和CaTiO相。微观结构分析和Rietveld精修表明,Ni掺杂剂可能替代CaCuTiO结构中的Cu位点。CaCuTiO(4.1 - 5.6μm)和CaTiO(1.2 - 1.4μm)的平均晶粒尺寸随Ni掺杂浓度的变化略有改变。对于=0.2的CaCuNiTiO/CaTiO,获得了最佳的介电性能。与未掺杂的复合材料相比,损耗角正切在1kHz时从tanδ∼0.161显著降低了一个数量级至∼0.016,而介电常数从ε'∼5.7×10略有下降至∼4.0×10。此外,通过Ni掺杂可以改善ε'的温度依赖性。介电性能的改善是由内部界面增强的电响应引起的,这导致了非欧姆特性的增强。对于=0.05的CaCuNiTiO/CaTiO,获得了最大的非线性系数(α∼7.6)。阻抗谱表明,CaCuNiTiO/CaTiO复合材料由半导体和绝缘成分组成。基于活性界面处的空间电荷极化对CaCuNiTiO/CaTiO的介电性能进行了解释。