Wang Hao, Wen Yao, Zeng Hui, Xiong Ziren, Tu Yangyuan, Zhu Hao, Cheng Ruiqing, Yin Lei, Jiang Jian, Zhai Baoxing, Liu Chuansheng, Shan Chongxin, He Jun
Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China.
Adv Mater. 2023 Jul 24:e2305044. doi: 10.1002/adma.202305044.
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
基于铁性材料的新兴非易失性存储技术有望在集成电路领域生产高速、低功耗和高密度存储器。二维材料中观察到的长程铁性有序引发了对二维磁体、二维铁电体、二维多铁性体及其器件应用的广泛研究兴趣。基于具有原子级光滑界面和超薄厚度的二维铁性材料和异质结构的器件,在开发先进的非易失性存储器方面展现出了令人瞩目的性能和巨大潜力。在此背景下,本文对新兴二维铁性材料进行了系统综述,重点介绍了它们在非易失性存储应用方面的最新研究,以期为二维磁性材料、二维铁电材料、二维多铁性材料及其相关器件提出更光明的前景。