Kim Jungho, Kim Jiwan
Department of Advanced Materials Engineering, Kyonggi University, Suwon 16227, Republic of Korea.
Materials (Basel). 2023 Jul 20;16(14):5106. doi: 10.3390/ma16145106.
Colloidal quantum dots (QDs) have emerged as promising candidates for optoelectronic devices. In particular, quantum dot light-emitting devices (QLEDs) utilizing QDs as the emission layer offer advantages in terms of simplified fabrication processes. However, the use of poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) as a hole injection layer (HIL) in QLEDs presents limitations due to its acidic and hygroscopic nature. In this study, NiO/ZnS core-shell nanostructures as an alternative HIL were studied. The ZnS shell on NiO nanoparticles effectively suppresses the exciton quenching process and regulates charge transfer in QLEDs. The fabricated QLEDs with NiO/ZnS HIL demonstrate high luminance and current efficiency, highlighting the potential of NiO/ZnS as an inorganic material for highly stable all-inorganic QLEDs.
胶体量子点（QDs）已成为光电器件的有前途的候选材料。特别是，将量子点用作发光层的量子点发光器件（QLED）在简化制造工艺方面具有优势。然而，在QLED中使用聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）作为空穴注入层（HIL）由于其酸性和吸湿性而存在局限性。在本研究中，研究了作为替代HIL的NiO/ZnS核壳纳米结构。NiO纳米颗粒上的ZnS壳有效地抑制了激子猝灭过程并调节了QLED中的电荷转移。具有NiO/ZnS HIL的制造的QLED表现出高亮度和电流效率，突出了NiO/ZnS作为用于高度稳定的全无机QLED的无机材料的潜力。
