State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun, 130033 Jilin, China.
University of Chinese Academy of Sciences , Beijing 100049, China.
ACS Appl Mater Interfaces. 2017 Nov 8;9(44):38755-38760. doi: 10.1021/acsami.7b10785. Epub 2017 Oct 27.
High-efficiency blue CdSe/ZnS quantum dots (QDs) have been synthesized for display application with emission peak over 460 nm with the purpose of reducing the harmful effect of short-wavelength light to human eyes. To reach a better charge balance, different size ZnO nanoparticles (NPs) were synthesized and electrical properties of ZnO NPs were analyzed. Quantum dot light-emitting diodes (QLEDs) based on as-prepared blue QDs and optimized ZnO NPs have been successfully fabricated. Using small-size ZnO NPs, we have obtained a maximum current efficiency (CE) of 14.1 cd A and a maximum external quantum efficiency (EQE) of 19.8% for QLEDs with an electroluminescence (EL) peak at 468 nm. To the best of our knowledge, this EQE is the highest value in comparison to the previous reports. The CIE 1931 color coordinates (0.136, 0.078) of this device are quite close to the standard (0.14, 0.08) of National Television System Committee (NTSC) 1953. The color saturation blue QLEDs show great promise for use in next-generation full-color displays.
高效蓝色 CdSe/ZnS 量子点 (QDs) 已被合成用于显示应用,其发射峰超过 460nm,目的是减少短波长光对人眼的有害影响。为了达到更好的电荷平衡,合成了不同尺寸的 ZnO 纳米粒子 (NPs),并分析了 ZnO NPs 的电学性能。基于制备的蓝色 QDs 和优化的 ZnO NPs 的量子点发光二极管 (QLED) 已成功制备。使用小尺寸 ZnO NPs,我们获得了最大电流效率 (CE) 为 14.1 cd A 和最大外量子效率 (EQE) 为 19.8%的 QLED,其电致发光 (EL) 峰值为 468nm。据我们所知,与之前的报告相比,这个 EQE 值是最高的。该器件的 CIE 1931 色坐标 (0.136, 0.078) 与国家电视系统委员会 (NTSC) 1953 年的标准 (0.14, 0.08) 相当接近。高色饱和度的蓝色 QLED 有望用于下一代全彩色显示器。