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V添加对非等原子CoCrNi中熵合金变形机制及力学性能的影响

Effects of V Addition on the Deformation Mechanism and Mechanical Properties of Non-Equiatomic CoCrNi Medium-Entropy Alloys.

作者信息

Shen Rui, Ni Zengyu, Peng Siyuan, Yan Haile, Tian Yanzhong

机构信息

Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.

Research Center for Metallic Wires, Northeastern University, Shenyang 110819, China.

出版信息

Materials (Basel). 2023 Jul 22;16(14):5167. doi: 10.3390/ma16145167.

Abstract

Equiatomic CoCrNi medium-entropy alloys exhibit superior strength and ductility. In this work, a non-equiatomic CoCrNi alloy with low stacking fault energy was designed, and different fractions of V were added to control the stacking fault energy and lattice distortion. Mechanical properties were evaluated by tensile tests, and deformation microstructures were characterized by transmission electron microscope (TEM). The main deformation mechanisms of CoCrNiV alloy with low V content are dislocation slip, stacking faults, and deformation-induced HCP phase transformation, while the dominant deformation patterns of CoCrNiV alloy with high V contents are dislocation slip and stacking faults. The yield strength increases dramatically when the V content is high, and the strain-hardening behavior changes non-monotonically with increasing the V content. V addition increases the stacking fault energy (SFE) and lattice distortion. The lower strain-hardening rate of 6V alloy than that of 2V alloy is dominated by the SFE. The higher strain-hardening rate of 10V alloy than that of 6V alloy is dominated by the lattice distortion. The effects of V addition on the SFE, lattice distortion, and strain-hardening behavior are discussed.

摘要

等原子CoCrNi中熵合金表现出优异的强度和延展性。在本工作中,设计了一种具有低堆垛层错能的非等原子CoCrNi合金,并添加不同比例的V以控制堆垛层错能和晶格畸变。通过拉伸试验评估力学性能,并用透射电子显微镜(TEM)表征变形微观结构。低V含量的CoCrNiV合金的主要变形机制是位错滑移、堆垛层错和变形诱导的HCP相变,而高V含量的CoCrNiV合金的主要变形模式是位错滑移和堆垛层错。当V含量较高时,屈服强度急剧增加,并且应变硬化行为随V含量增加而非单调变化。添加V会增加堆垛层错能(SFE)和晶格畸变。6V合金比2V合金更低的应变硬化率由SFE主导。10V合金比6V合金更高的应变硬化率由晶格畸变主导。讨论了添加V对SFE、晶格畸变和应变硬化行为的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5090/10385466/00c94ff1ef72/materials-16-05167-g001.jpg

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