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用于有机场效应晶体管的基于简单缺电子氰化反式-1,3-丁二烯的半导体聚合物。

Semiconducting Polymers Based on Simple Electron-Deficient Cyanated trans-1,3-Butadienes for Organic Field-Effect Transistors.

作者信息

Li Jianfeng, Chen Zhicai, Wang Junwei, Young Jeong Sang, Yang Kun, Feng Kui, Yang Jie, Liu Bin, Woo Han Young, Guo Xugang

机构信息

Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, Guangdong, China.

Department State Key Laboratory of Marine Resource Utilization in South China Sea, College of Materials Science and Engineering, Hainan University, 570228, Haikou, Hainan, China.

出版信息

Angew Chem Int Ed Engl. 2023 Sep 18;62(38):e202307647. doi: 10.1002/anie.202307647. Epub 2023 Aug 9.

Abstract

Developing high-performance but low-cost n-type polymers remains a significant challenge in the commercialization of organic field-effect transistors (OFETs). To achieve this objective, it is essential to design the key electron-deficient units with simple structures and facile preparation processes, which can facilitate the production of low-cost n-type polymers. Herein, by sequentially introducing fluorine and cyano functionalities onto trans-1,3-butadiene, we developed a series of structurally simple but highly electron-deficient building blocks, namely 1,4-dicyano-butadiene (CNDE), 3-fluoro-1,4-dicyano-butadiene (CNFDE), and 2,3-difluoro-1,4-dicyano-butadiene (CNDFDE), featuring a highly coplanar backbone and deep-positioned lowest unoccupied molecular orbital (LUMO) energy levels (-3.03-4.33 eV), which render them highly attractive for developing n-type semiconducting polymers. Notably, all these electron-deficient units can be easily accessed by a two-step high-yield synthetic procedure from low-cost raw materials, thus rendering them highly promising candidates for commercial applications. Upon polymerization with diketopyrrolopyrrole (DPP), three copolymers were developed that demonstrated unipolar n-type transport characteristics in OFETs with the highest electron mobility of >1 cm  V  s . Hence, CNDE, CNFDE, and CNDFDE represent a class of novel, simple, and efficient electron-deficient units for constructing low-cost n-type polymers, thereby providing valuable insight for OFET applications.

摘要

开发高性能但低成本的n型聚合物仍然是有机场效应晶体管(OFET)商业化中的一项重大挑战。为实现这一目标,设计具有简单结构和简便制备工艺的关键缺电子单元至关重要,这有助于低成本n型聚合物的生产。在此,通过依次将氟和氰基官能团引入反式-1,3-丁二烯,我们开发了一系列结构简单但高度缺电子的结构单元,即1,4-二氰基丁二烯(CNDE)、3-氟-1,4-二氰基丁二烯(CNFDE)和2,3-二氟-1,4-二氰基丁二烯(CNDFDE),其具有高度共面的主链和位于较深位置的最低未占据分子轨道(LUMO)能级(-3.03 - 4.33 eV),这使得它们对于开发n型半导体聚合物极具吸引力。值得注意的是,所有这些缺电子单元都可以通过两步高产率合成程序从低成本原料轻松获得,因此使其成为商业应用中极具潜力的候选物。与二酮吡咯并吡咯(DPP)聚合后,开发了三种共聚物,它们在OFET中表现出单极n型传输特性,最高电子迁移率>1 cm² V⁻¹ s⁻¹。因此,CNDE、CNFDE和CNDFDE代表了一类用于构建低成本n型聚合物的新型、简单且高效的缺电子单元,从而为OFET应用提供了有价值的见解。

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