Suppr超能文献

共振c-Si超表面连续谱中增强型准束缚态的双重控制

Dual Control of Enhanced Quasi-Bound States in the Continuum Emission from Resonant c-Si Metasurfaces.

作者信息

Zhang Zhenghe, Xu Chaojie, Liu Chen, Lang Man, Zhang Yuehao, Li Minghao, Lu Wanli, Chen Zefeng, Wang Chinhua, Wang Shaojun, Li Xiaofeng

机构信息

School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China.

Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China.

出版信息

Nano Lett. 2023 Aug 23;23(16):7584-7592. doi: 10.1021/acs.nanolett.3c02148. Epub 2023 Aug 4.

Abstract

Optical bound states in the continuum (BICs) offer strong interactions with quantum emitters and have been extensively studied for manipulating spontaneous emission, lasing, and polariton Bose-Einstein condensation. However, the out-coupling efficiency of quasi-BIC emission, crucial for practical light-emitting devices, has received less attention. Here, we report an adaptable approach for enhancing quasi-BIC emission from a resonant monocrystalline silicon (c-Si) metasurface through lattice and multipolar engineering. We identify dual-BICs originating from electric quadrupoles (EQ) and out-of-plane magnetic dipoles, with EQ quasi-BICs exhibiting concentrated near-fields near the c-Si nanodisks. The enhanced fractional radiative local density of states of EQ quasi-BICs overlaps spatially with the emitters, promoting efficient out-coupling. Furthermore, coupling the EQ quasi-BICs with Rayleigh anomalies enhances directional emission intensity, and we observe inherent opposite topological charges in the multipolarly controlled dual-BICs. These findings provide valuable insights for developing efficient nanophotonic devices based on quasi-BICs.

摘要

连续域中的光学束缚态(BICs)与量子发射器具有强相互作用,并且已经被广泛研究用于操纵自发辐射、激光发射和极化激元玻色-爱因斯坦凝聚。然而,对于实际发光器件至关重要的准BIC发射的外耦合效率却较少受到关注。在此,我们报告了一种通过晶格和多极工程增强共振单晶硅(c-Si)超表面准BIC发射的适应性方法。我们识别出源自电四极子(EQ)和面外磁偶极子的双BIC,其中EQ准BIC在c-Si纳米盘附近表现出集中的近场。EQ准BIC增强的分数辐射局域态密度在空间上与发射器重叠,促进了高效的外耦合。此外,将EQ准BIC与瑞利异常耦合增强了定向发射强度,并且我们在多极控制的双BIC中观察到固有的相反拓扑电荷。这些发现为基于准BIC开发高效纳米光子器件提供了有价值的见解。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验