Ossowski Tomasz, Kiejna Adam
Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław, Poland.
J Phys Condens Matter. 2023 Aug 21;35(46). doi: 10.1088/1361-648X/acede2.
We report results of density functional theory calculations of structure and properties of 1-5 monolayer thin FeO(001) films and their interactions with the Fe(001) surface. It is found that deposition of an iron-oxide film affects weakly geometry of the Fe(001) support, causing small<2% expansion of the first interplanar distance compared to clean iron surface. Analysis of the electronic structure of the FeO/Fe system shows that after interface formation, the oxide layer remains semiconducting and the substrate metallic. Electronic structure of the FeO(001) layer in direct contact with the Fe(001) surface exhibits metallic character. Magnetism of the metal/semiconductor interface is only slightly disturbed compared to that of isolated components. The FeO adlayers preserve antiferromagnetic (AFM) nature of the oxide and the sharp boundary between higher AFM phase of FeO and lower ferromagnetic phase of Fe is observed at the interface.
我们报告了关于1 - 5个单层的FeO(001)薄膜的结构和性质及其与Fe(001)表面相互作用的密度泛函理论计算结果。研究发现,氧化铁薄膜的沉积对Fe(001)载体的几何结构影响较弱,与清洁铁表面相比,第一晶面间距产生小于2%的微小膨胀。对FeO/Fe体系电子结构的分析表明,界面形成后,氧化层保持半导体性质,而基底保持金属性质。与Fe(001)表面直接接触的FeO(001)层的电子结构表现出金属特性。与孤立组分相比,金属/半导体界面的磁性仅受到轻微干扰。FeO吸附层保持了氧化物的反铁磁(AFM)性质,并且在界面处观察到FeO的较高AFM相和Fe的较低铁磁相之间的清晰边界。