Ramos Sergio L L M, Carvalho Bruno R, Monteiro Lobato Raphael Longuinhos, Ribeiro-Soares Jenaina, Fantini Cristiano, Ribeiro Henrique B, Molino Laurent, Plumadore Ryan, Heinz Tony, Luican-Mayer Adina, Pimenta Marcos A
Centro de Tecnologia em Nanomateriais e Grafeno (CTNano), Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil.
Departamento de Física, Universidade Federal do Rio Grande do Norte, Natal, Rio Grande do Norte 59078-970, Brazil.
ACS Nano. 2023 Aug 22;17(16):15883-15892. doi: 10.1021/acsnano.3c03902. Epub 2023 Aug 9.
The layered transition-metal dichalcogenide material 1T-TaS possesses successive phase transitions upon cooling, resulting in strong electron-electron correlation effects and the formation of charge density waves (CDWs). Recently, a dimerized double-layer stacking configuration was shown to form a Peierls-like instability in the electronic structure. To date, no direct evidence for this double-layer stacking configuration using optical techniques has been reported, in particular through Raman spectroscopy. Here, we employ a multiple excitation and polarized Raman spectroscopy to resolve the behavior of phonons and electron-phonon interactions in the commensurate CDW lattice phase of dimerized 1T-TaS. We observe a distinct behavior from what is predicted for a single layer and probe a richer number of phonon modes that are compatible with the formation of double-layer units (layer dimerization). The multiple-excitation results show a selective coupling of each Raman-active phonon with specific electronic transitions hidden in the optical spectra of 1T-TaS, suggesting that selectivity in the electron-phonon coupling must also play a role in the CDW order of 1T-TaS.
层状过渡金属二硫属化物材料1T-TaS在冷却时会发生连续的相变,从而产生强烈的电子-电子关联效应并形成电荷密度波(CDW)。最近,一种二聚化的双层堆叠结构被证明会在电子结构中形成类似派尔斯的不稳定性。迄今为止,尚未有使用光学技术,特别是通过拉曼光谱法,对这种双层堆叠结构的直接证据的报道。在此,我们采用多重激发和偏振拉曼光谱法来解析二聚化1T-TaS的共格CDW晶格相中的声子行为和电子-声子相互作用。我们观察到与单层预测结果不同的行为,并探测到更丰富的与双层单元形成(层二聚化)相容的声子模式。多重激发结果表明,每个拉曼活性声子与隐藏在1T-TaS光谱中的特定电子跃迁存在选择性耦合,这表明电子-声子耦合的选择性在1T-TaS的CDW序中也必定发挥作用。