Wang Wen, Dietzel Dirk, Schirmeisen André
School of Mechanical Engineering, Southwest Jiaotong University, 610031, Chengdu, China.
Institute of Applied Physics, Justus-Liebig-Universität Giessen, 35392, Giessen, Germany.
Sci Rep. 2019 May 8;9(1):7066. doi: 10.1038/s41598-019-43307-2.
Transition metal dichalcogenides are lamellar materials which can exhibit unique and remarkable electronic behavior due to effects of electron-electron and electron-phonon coupling. Among these materials, 1T-tantalum disulfide (1T-TaS) has spurred considerable interest, due to its multiple first order phase transitions between different charge density wave (CDW) states. In general, the basic effects of charge density wave formation in 1T-TaS can be attributed to in plane re-orientation of Ta-atoms during the phase transitions. Only in recent years, an increasing number of studies has also emphasized the role of interlayer interaction and stacking order as a crucial aspect to understand the specific electronic behavior of 1T-TaS, especially for technological systems with a finite number of layers. Obviously, continuously monitoring the out of plane expansion of the sample can provide direct inside into the rearrangement of the layer structure during the phase transition. In this letter, we therefore investigate the c-axis lattice discontinuities of 1T-TaS by atomic force microscopy (AFM) method under ultra-high vacuum conditions. We find that the c-axis lattice experiences a sudden contraction across the nearly-commensurate CDW (NC-CDW) phase to commensurate CDW (C-CDW) phase transition during cooling, while an expansion is found during the transition from the C-CDW phase to a triclinic CDW phase during heating. Thereby our measurements reveal, how higher order C-CDW phase can favor a more dense stacking. Additionally, our measurements also show subtler effects like e.g. two expansion peaks at the start of the transitions, which can provide further insight into the mechanisms at the onset of CDW phase transitions.
过渡金属二硫属化物是层状材料,由于电子-电子和电子-声子耦合的作用,它们可以表现出独特而显著的电子行为。在这些材料中,1T-二硫化钽(1T-TaS₂)因其在不同电荷密度波(CDW)状态之间的多个一级相变而引起了相当大的关注。一般来说,1T-TaS₂中电荷密度波形成的基本效应可归因于相变过程中Ta原子的面内重新取向。直到近年来,越来越多的研究也强调了层间相互作用和堆积顺序作为理解1T-TaS₂特定电子行为的关键方面的作用,特别是对于有限层数的技术系统。显然,持续监测样品的面外膨胀可以直接深入了解相变过程中层结构的重排。在这封信中,我们因此在超高真空条件下通过原子力显微镜(AFM)方法研究了1T-TaS₂的c轴晶格不连续性。我们发现,在冷却过程中,c轴晶格在从近 commensurate CDW(NC-CDW)相到commensurate CDW(C-CDW)相的转变中经历突然收缩,而在加热过程中从C-CDW相到三斜CDW相的转变中发现膨胀。由此我们的测量揭示了高阶C-CDW相如何有利于更密集的堆积。此外,我们的测量还显示出更细微的效应,例如在转变开始时的两个膨胀峰,这可以为CDW相变开始时的机制提供进一步的见解。