Magnetization reversal of [Co/Pd] perpendicular magnetic thin film dot on (Bi,La)(Fe,Co)Omultiferroic thin film by applying electric field.

A multilayer structure with a high-quality (Bi,La)(Fe,Co)Omultiferroic thin film/[Co/Pd] perpendicular magnetic thin film dots was fabricated for demonstrating magnetization reversal of [Co/Pd] dots under an applied electric field. Although the magnetization direction of the multiferroic thin film was reversed under the electric field, the magnetic properties of the multiferroic thin films were generally low. If the multiferroic thin film in this structure can control the magnetization direction of the highly functional magnetic thin film under an electric field, high-performance magnetic devices with low power consumption are easily obtained. The magnetic domain structure of the [Co/Pd] dots fabricated on the (Bi,La)(Fe,Co)Othin film was analyzed by magnetic force microscopy (MFM). The structure was de-magnetized before the local electric-field application and magnetized after applying the field, showing reduced magnetic contrast of the dot. The line profile of the MFM image revealed a downward magnetic moment of 75%, which reversed to upward under the local electric field. Magnetic interaction between the (Bi,La)(Fe,Co)Oand [Co/Pd] layers was also observed in magnetization hysteresis measurements. These results indicate that the magnetization direction of the [Co/Pd] dots was transferred through the magnetization reversal of the (Bi,La)(Fe,Co)Olayer under a local electric field. That is, the magnetization of [Co/Pd] dots were reversed by applying a local electric field to the multilayer structure. This demonstration can potentially realize high-performance magnetic devices such as large capacity memory with low power consumption.