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通过锂掺杂和缺陷生成增强喷雾合成的HKUST-1对氢的吸附

Enhancement of Hydrogen Adsorption on Spray-Synthesized HKUST-1 via Lithium Doping and Defect Creation.

作者信息

Kubo Masaru, Matsumoto Tomoki, Shimada Manabu

机构信息

Department of Advanced Science and Engineering, Graduate School of Advanced Science and Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashi-Hiroshima 739-8527, Hiroshima, Japan.

出版信息

Materials (Basel). 2023 Aug 2;16(15):5416. doi: 10.3390/ma16155416.

Abstract

We prepared HKUST-1 (CuBTC; BTC = 1,3,5-benzenetricarboxylate) using a spray synthesis method with Li doping and defect created via partial replacement of HBTC with isophthalic acid (IP) to enhance the H adsorption capacity. Li-doping was performed by incorporating LiNO in HKUST-1 via spray synthesis and subsequent thermal treatment for decomposing NO, which enhances H uptake at 77 K and 1 bar per unit mass and per unit area from 2.37 wt% and 4.16 molecules/nm for undoped HKUST-1 to 2.47 wt% and 4.33 molecules/nm, respectively. Defect creation via the replacement of the BTC linker with the IP linker slightly in HKUST-1 skeleton did not affect H uptake. Both Li-doping and defect creation significantly enhanced H uptake to 3.03 wt%, which was caused by the coordination of Li ions with free carboxylic groups of the created defects via IP replacement.

摘要

我们采用喷雾合成法制备了掺锂的HKUST-1(CuBTC;BTC = 1,3,5-苯三甲酸),并通过用间苯二甲酸(IP)部分取代均苯三甲酸(HBTC)来制造缺陷,以提高氢吸附容量。通过喷雾合成将LiNO掺入HKUST-1中,随后进行热处理以分解NO来实现锂掺杂,这使得在77 K和1 bar下,每单位质量和单位面积的氢吸收量分别从不掺杂的HKUST-1的2.37 wt%和4.16分子/纳米提高到2.47 wt%和4.33分子/纳米。在HKUST-1骨架中用IP连接体略微取代BTC连接体来制造缺陷并不影响氢吸收。锂掺杂和制造缺陷都显著提高了氢吸收量至3.03 wt%,这是由于锂离子通过IP取代与所制造缺陷的游离羧基配位所致。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c6c/10419904/bc1056adefe2/materials-16-05416-sch001.jpg

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