Meng You, Wang Weijun, Wang Wei, Li Bowen, Zhang Yuxuan, Ho Johnny
Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China.
Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan.
Adv Mater. 2024 Apr;36(17):e2306290. doi: 10.1002/adma.202306290. Epub 2023 Nov 30.
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
反双极异质结对于构建高频振荡器、快速开关和多值逻辑（MVL）器件至关重要，这些器件在下一代集成电路芯片和电信技术方面具有广阔的潜力。得益于战略性的材料设计和器件集成，反双极异质结展现出了无与伦比的器件和电路性能，超越了其他半导体材料系统。本综述旨在全面总结反双极异质结领域的研究成果。首先，讨论了反双极器件的基本工作机制。之后，探讨了反双极器件中使用的潜在材料，特别关注基于二维、一维和有机的异质结。接下来，总结了采用反双极异质结的主要器件应用，包括反双极晶体管（AAT）、光电探测器、倍频器和突触器件。此外，除了单个器件的进展外，还讨论了这些器件在电路层面的实际集成，包括MVL电路、复杂逻辑门和脉冲神经元电路等主题。最后，还强调了当前反双极异质结及其应用面临的关键挑战和未来研究方向。
