Son Hyeonje, Choi Haeju, Jeon Jaeho, Kim Young Jae, Choi Seunghyuk, Cho Jeong Ho, Lee Sungjoo
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
Department of Chemical Engineering, Yonsei University, Seoul 03722, Korea.
ACS Appl Mater Interfaces. 2021 Feb 24;13(7):8692-8699. doi: 10.1021/acsami.0c17739. Epub 2021 Feb 15.
Recently, for overcoming the fundamental limits of conventional silicon technology, multivalued logic (MVL) circuits based on two-dimensional (2D) materials have received significant attention for reducing the power consumption and the complexity of integrated circuits. Compared with the conventional silicon complementary metal oxide semiconductor technology, new functional heterostructures comprising 2D materials can be readily implemented, owing to their unique inherent electrical properties. Furthermore, their process integration does not pose issues of lattice mismatch at junction interfaces. This facilitates the realization of new functional logic gate circuit configurations. However, the reported three-valued NOT gates (ternary inverters) based on 2D materials require stringent operating conditions and complex fabrication processes to obtain three distinct logic states. Herein, a general structure of MVL devices based on a simple series connection of 2D materials with partial surface functionalization is demonstrated. By arranging three 2D materials exhibiting p-type, ambipolar, and n-type conductivities, ternary inverter circuits can be established based on the complementary driving between 2D heterotransistors. This ternary inverter circuit can be further improved for quaternary inverter circuits by controlling the charge neutral point of partial ambipolar 2D materials using surface functionalization, which is an effective and nondestructive doping method for 2D materials.
最近，为了克服传统硅技术的基本限制，基于二维（2D）材料的多值逻辑（MVL）电路在降低集成电路功耗和复杂度方面受到了广泛关注。与传统的硅互补金属氧化物半导体技术相比，由于其独特的固有电学特性，包含二维材料的新型功能异质结构能够很容易地实现。此外，它们的工艺集成不会在结界面处产生晶格失配问题。这有利于实现新的功能逻辑门电路配置。然而，已报道的基于二维材料的三值非门（三进制反相器）需要严格的工作条件和复杂的制造工艺才能获得三种不同的逻辑状态。在此，展示了一种基于具有部分表面功能化的二维材料简单串联连接的多值逻辑器件的通用结构。通过排列三种呈现p型、双极性和n型导电性的二维材料，可以基于二维异质晶体管之间的互补驱动建立三进制反相器电路。通过使用表面功能化控制部分双极性二维材料的电荷中性点，可以进一步将这种三进制反相器电路改进为四进制反相器电路，这是一种用于二维材料的有效且无损的掺杂方法。
