You Jie, Han Zhao, Zhang Ningning, Zhang Qiancui, Zhang Yichi, Liu Yang, Li Yang, Ao Jinping, Jiang Zuimin, Zhong Zhenyang, Guo Hui, Hu Huiyong, Wang Liming, Zhu Zhangming
Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi'an, 710071, China.
School of Integrated Circuits, Jiangnan University, Wuxi, Jiangsu, 214000, China.
Adv Sci (Weinh). 2024 Oct;11(40):e2404336. doi: 10.1002/advs.202404336. Epub 2024 Jul 23.
The burgeoning need for extensive data processing has sparked enthusiasm for the development of a novel optical logic gate platform. In this study, junction field-effect phototransistors based on molybdenum disulfide/Germanium (MoS/Ge) heterojunctions are constructed as optical logic units. This device demonstrates a positive photoresponse that is attributed to the photoconductivity effect occurring upon irradiation with visible (Vis) light. Under the illumination of near-infrared (NIR) optics with wavelengths within the communication band, the device shows a negative photoresponse, which is associated with the interlayer Coulomb interactions. The current state of the device can be effectively modulated as different logical states by precisely tuning the wavelength and power density of the optical. Within a 3 × 3 MoS/Ge phototransistor array, five essentially all-optical logic gates ("AND," "OR," "NAND," "NOT," and "NOR") can be achieved in every signal unit. Furthermore, three complex all-optical logical operations are demonstrated by integrating two MoS/Ge phototransistors in series. Compared to electronic designs, these all-optical logic devices offer a significant reduction in transistor number, with savings of 50-94% when implementing the above-mentioned functions. These results present opportunities for the development of photonic chips with low power consumption, high fidelity, and large volumes.
对大量数据处理的迫切需求激发了人们对新型光学逻辑门平台开发的热情。在本研究中，基于二硫化钼/锗（MoS/Ge）异质结的结型场效应光电晶体管被构建为光学逻辑单元。该器件表现出正的光响应，这归因于在可见光（Vis）照射下发生的光电导效应。在通信波段内波长的近红外（NIR）光照射下，该器件呈现负的光响应，这与层间库仑相互作用有关。通过精确调谐光的波长和功率密度，器件的当前状态可以有效地调制为不同的逻辑状态。在一个3×3的MoS/Ge光电晶体管阵列中，每个信号单元都可以实现五个基本的全光逻辑门（“与”、“或”、“与非”、“非”和“或非”）。此外，通过串联集成两个MoS/Ge光电晶体管，展示了三种复杂的全光逻辑运算。与电子设计相比，这些全光逻辑器件显著减少了晶体管数量，在实现上述功能时节省了50 - 94%。这些结果为开发低功耗、高保真和大容量的光子芯片提供了机会。
