Wei Fuxian, Chen Jing, Zhao Xi, Wu Yuting, Wang Huiyao, Chen Xiaoli, Xiong Zuhong
Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing, 400715, P. R. China.
Adv Sci (Weinh). 2023 Oct;10(29):e2303192. doi: 10.1002/advs.202303192. Epub 2023 Aug 16.
The high-level reverse intersystem crossing (HL-RISC, T → S ) process from triplet to singlet exciton, namely the "hot exciton" channel, has recently been demonstrated in the traditional fluorescent emitter of TBRb. Although it is a potential pathway to improve the utilization of non-radiative triplet exciton energy, highly efficient fluorescent organic light emitting diodes (FOLEDs) based on this "hot exciton" channel have not been developed. Herein, high-efficiency and low-efficiency roll-off FOLEDs are achieved through doping TBRb molecules into an energy-level matched exciplex co-host. Combining the low-level RISC (LL-RISC, EX → EX ) process in the exciplex co-host with the HL-RISC process of hot excitons in TBRb to fully harvest the triplet energy, a record-high external quantum efficiency (EQE) of 20.4% is obtained via a proper Dexter energy transfer of triplet excitons, realizing the efficiency breakthrough from fully fluorescent material-based OLEDs with TBRb as an end emitter. Furthermore, the fingerprint Magneto-electroluminescence (MEL) as a sensitive measuring tool is employed to visualize the "hot exciton" channel in TBRb, which also directly verifies the effective energy confinement and the full utilization of hot excitons. Obviously, this work paves a promising way for further fabricating high-efficiency TBRb-based FOLEDs for lighting and flat-panel display applications.
从三重态激子到单重态激子的高能级反向系间窜越(HL-RISC,T→S)过程,即“热激子”通道,最近已在传统荧光发射体TBRb中得到证实。尽管这是提高非辐射三重态激子能量利用率的一条潜在途径,但基于这种“热激子”通道的高效有机发光二极管(FOLED)尚未得到开发。在此,通过将TBRb分子掺杂到能级匹配的激基复合物共主体中,实现了高效和低效率滚降的FOLED。将激基复合物共主体中的低能级系间窜越(LL-RISC,EX→EX)过程与TBRb中热激子的HL-RISC过程相结合,以充分收集三重态能量,通过三重态激子的适当德克斯特能量转移,获得了创纪录的20.4%的外量子效率(EQE),实现了以TBRb作为终端发射体的全荧光材料基OLED的效率突破。此外,指纹磁电致发光(MEL)作为一种灵敏的测量工具,被用于可视化TBRb中的“热激子”通道,这也直接验证了有效的能量限制和热激子的充分利用。显然,这项工作为进一步制造用于照明和平板显示应用的高效TBRb基FOLED铺平了一条有前景的道路。