High stability and strong luminescence CsPbBr-CsPbBr thin films for all-inorganic perovskite light-emitting diodes.

All-inorganic lead halide perovskite, characterized by its exceptional optical and electrical properties, is burgeoning as a potential optoelectronic material. However, the standalone CsPbBr component encounters several challenges including small exciton binding energy (≈40 meV) and long charge diffusion length, giving rise to low photo-luminescence quantum-yield (PLQY); ion migration leads to instability in device operation, hindering device operation and potential development. To circumvent these limitations, our research endeavors to construct a novel core-shell structure that transforms the continuous [PbX] octahedron into an isolated octahedral structure. We introduce the CsPbBr phase with 0D structure to passivate the vacancy defects in CsPbBr, thereby suppressing ion migration and enhancing the luminescence intensity and stability. Our methodology involves fabricating dense CsPbBr-CsPbBr composite films using a co-evaporation method, wherein the molar ratio of CsBr and PbBr is precisely adjusted. The films are subsequently rapidly annealed under ambient air conditions, and the effects of different annealing temperatures and annealing times on the CsPbBr-CsPbBr films were investigated. Our results demonstrate significantly improved stability of the annealed films, with a mere 15% decrease in PL intensity after 100 days of storage under ambient air conditions at 48% relative humidity (RH). Based on this thin film, we fabricated all-inorganic structure Ag/N-Si/CsPbBr-CsPbBr/NiO/ITO light emitting diodes (LEDs), the devices have a low turn-on voltage ∼3 V and under unencapsulated, ambient air conditions, it can operate continuously for 12 hours under DC drive with only 10% attenuation. The results we obtained open up the possibility of designing and developing air-stable perovskite LEDs.