van Treeck David, Lähnemann Jonas, Brandt Oliver, Geelhaar Lutz
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
Nanotechnology. 2023 Sep 14;34(48). doi: 10.1088/1361-6528/acf3f5.
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. This model allows us, on the one hand, to optimise the conditions for high and homogeneous In incorporation and, on the other hand, to explain the influence of changes in the growth conditions on the sample morphology and In content. Specifically, the impact of the V/III and In/Ga flux ratios, the rotation speed and the rotation direction are investigated. Notably, with In acting as surfactant, the ternary (In,Ga)N shells are much more homogeneous in thickness along the nanowire length than their binary GaN counterparts.
利用分子束外延技术，我们展示了在非常细的（直径35纳米）氮化镓（GaN）芯纳米线周围生长发射绿色光谱范围光的（铟，镓）氮（In,Ga）N壳层。这些氮化镓纳米线是通过在氮化钛（TiN）上自组装生长获得的。我们提出了一个定性的壳层生长模型，该模型考虑了纳米结构的三维性质以及原子通量的方向性。一方面，这个模型使我们能够优化铟（In）高均匀掺入的条件，另一方面，能够解释生长条件变化对样品形态和铟含量的影响。具体而言，研究了V/III和In/Ga通量比、转速和旋转方向的影响。值得注意的是，由于铟起到表面活性剂的作用，三元（In,Ga）N壳层沿纳米线长度方向的厚度比二元氮化镓壳层更加均匀。
