Ruiz M Gómez, Castro A, Herranz J, da Silva A, John P, Trampert A, Brandt O, Geelhaar L, Lähnemann J
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
Nanotechnology. 2024 Apr 9;35(26). doi: 10.1088/1361-6528/ad375b.
(In, Ga) alloy droplets are used to catalyse the growth of (In, Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In, Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) flux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In, Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms.
（铟，镓）合金液滴用于通过分子束外延在硅（111）衬底上催化（铟，镓）砷纳米线的生长。这些纳米线的成分、形态和光学性质可通过所采用的元素通量进行调节。为了掺入超过10%的铟，需要高于0.7的高铟/（铟+镓）通量比。我们报道了对于铟/（铟+镓）通量比为0.8的体相（铟，镓）砷纳米线，铟的最大含量接近30%。然而，随着铟/（铟+镓）通量比的增加，纳米线的长度和直径显著减小。在由钝化的（铟，铝）砷壳覆盖的纳米线上使用光致发光和阴极发光光谱，观察到两个发光带。很大一部分纳米线显示出均匀发射，其波长对应于该部分中的铟含量，而催化剂液滴的消耗导致纳米线顶部出现光谱位移的发射带。这项工作中研究的（铟，镓）砷纳米线为在硅平台上集成红外发射器提供了一种新方法。
