Choi Minsu, Lee Youngseok, You Yebin, Cho Chulhee, Jeong Wonnyoung, Seong Inho, Choi Byeongyeop, Kim Sijun, Seol Youbin, You Shinjae, Yeom Geun Young
Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea.
Institute of Quantum Systems (IQS), Chungnam National University, Daejeon 34134, Republic of Korea.
Materials (Basel). 2023 Aug 14;16(16):5624. doi: 10.3390/ma16165624.
This paper proposes the use of environmentally friendly alternatives, CF and CHF, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO plasma etching, instead of conventional precursors CF and CHF. The study employs scanning electron microscopy for etch profile analysis and quadrupole mass spectrometry for plasma diagnosis. Ion bombardment energy at the etching conditions is determined through self-bias voltage measurements, while densities of radical species are obtained using quadrupole mass spectroscopy. The obtained results compare the etch performance, including etch rate and selectivity, between CF and CF, as well as between CHF and CHF. Furthermore, greenhouse gas (GHG) emissions are evaluated using a million metric ton of carbon dioxide equivalent, indicating significantly lower emissions when replacing conventional precursors with the proposed alternatives. The results suggest that a significant GHG emissions reduction can be achieved from the investigated alternatives without a deterioration in SiO etching characteristics. This research contributes to the development of alternative precursors for reducing global warming impacts.
本文提出分别使用环境友好型替代物CF和CHF作为全氟化碳（PFC）和氢氟碳化物（HFC）前驱体，用于SiO等离子体蚀刻，以替代传统前驱体CF4和CHF3。该研究采用扫描电子显微镜进行蚀刻轮廓分析，并用四极质谱进行等离子体诊断。蚀刻条件下的离子轰击能量通过自偏压测量来确定，而自由基种类的密度则使用四极质谱法获得。所得结果比较了CF4与CF之间以及CHF3与CHF之间的蚀刻性能，包括蚀刻速率和选择性。此外，使用百万吨二氧化碳当量来评估温室气体（GHG）排放，结果表明用所提出的替代物取代传统前驱体时，排放量显著降低。结果表明，在所研究的替代物中可以实现显著的温室气体减排，而不会使SiO蚀刻特性变差。这项研究有助于开发减少全球变暖影响的替代前驱体。
