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使用基于CHF的气体对无掩膜氧化物/氮化物/氧化物/氮化物（ONON）堆叠结构进行蚀刻的特性

Etch characteristics of maskless oxide/nitride/oxide/nitride (ONON) stacked structure using CHF-based gas.

作者信息

Cho Nam Il, Hong Jong Woo, Yoo Hee Jin, Eoh Hyeong Joon, Kim Chan Ho, Jeong Jun Won, Kim Kyung Lim, Kwak Jung Hun, Cho Yong Jun, Kim Dong Woo, Yeom Geun Young

机构信息

Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, Gyeonggi-Do, 16419, Republic of Korea.

School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-Do, 16419, Republic of Korea.

出版信息

Sci Rep. 2024 Oct 2;14(1):22900. doi: 10.1038/s41598-024-74107-y.

DOI:10.1038/s41598-024-74107-y
PMID:39358416
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11447234/
Abstract

Oxide/Nitride/Oxide/Nitride (ONON; SiO/SiN/SiO/SiN) stacked structure is widely used in the 3D vertical structure of semiconductor cells. Previously, to form a 3D cells, photoresist (PR) was patterned and repeatedly trimmed on the top of ONON after the etching of one ON layer. Due to the time-consuming process of etching layer-by-layer of ON layer, two-step etch processing using CF-based or CF-based gases composed of maskless ONON stack feature etching and followed one ON layer-by layer etching by PR trimming in the ONON stack feature are employed these days. However, the two-step etching method resulted in poor etch profiles of maskless ONON stack feature in addition to high global warming potential of CF and CF. In this study, we investigated the etching of maskless ONON stack feature using CHF-based gas having a low global warming potential and the effects of CHF-based gas on the etch characteristics of maskless ONON stack feature such as etch rate, etch profile, change in critical dimensional (CD), and etch selectivity between SiO and SiN have been investigated. CHF-based gas showed the highest etch rates compared to CF and CF-based gases in addition to the etch selectivity of ~ 1:1 between SiO and SiN due to hydrogen included in the gas structure. In addition, the change in horizontal CD was lower in the order of CHF, CF, and CF-based gases due to the more effective sidewall passivation in the order of CF, CF, and CHF-based gases. The thicker carbon-based polymer layer on the sidewall also played an important role in maintaining the shape of the top edge shape of maskless ONON stack feature when etching a line feature in an environment without a mask.

摘要

氧化物/氮化物/氧化物/氮化物（ONON；SiO/SiN/SiO/SiN）堆叠结构广泛应用于半导体器件的三维垂直结构中。此前，为了形成三维器件，在蚀刻一层ON之后，要在ONON顶部对光刻胶（PR）进行图案化并反复修整。由于对ON层进行逐层蚀刻的过程耗时较长，如今采用了两步蚀刻工艺，即使用基于CF或由无掩膜ONON堆叠特征蚀刻组成的基于CF的气体，然后通过在ONON堆叠特征中进行PR修整对一层ON进行逐层蚀刻。然而，两步蚀刻法除了导致CF和CF具有较高的全球变暖潜能值外，还造成了无掩膜ONON堆叠特征的蚀刻轮廓不佳。在本研究中，我们研究了使用具有低全球变暖潜能值的基于CHF的气体对无掩膜ONON堆叠特征的蚀刻情况，并研究了基于CHF的气体对无掩膜ONON堆叠特征蚀刻特性的影响，如蚀刻速率、蚀刻轮廓、关键尺寸（CD）变化以及SiO和SiN之间的蚀刻选择性。与基于CF和CF的气体相比，基于CHF的气体显示出最高的蚀刻速率，此外由于气体结构中包含氢，SiO和SiN之间具有约1:1的蚀刻选择性。此外，由于基于CF、CF和CHF的气体对侧壁的钝化效果依次增强，基于CHF的气体中水平CD的变化最小。在无掩膜环境中蚀刻线条特征时，侧壁上较厚的碳基聚合物层对于保持无掩膜ONON堆叠特征顶部边缘形状也起到了重要作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/ce1e3b887022/41598_2024_74107_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/0a604f4ab517/41598_2024_74107_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/596c11df52ba/41598_2024_74107_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/d685fddefeec/41598_2024_74107_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/2ae4d363d530/41598_2024_74107_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/0801ff29c675/41598_2024_74107_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/940a459ec0d9/41598_2024_74107_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/29f2efe866e8/41598_2024_74107_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/ac1e8a0758b6/41598_2024_74107_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/ce1e3b887022/41598_2024_74107_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/0a604f4ab517/41598_2024_74107_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/596c11df52ba/41598_2024_74107_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/d685fddefeec/41598_2024_74107_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/2ae4d363d530/41598_2024_74107_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/0801ff29c675/41598_2024_74107_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/940a459ec0d9/41598_2024_74107_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/29f2efe866e8/41598_2024_74107_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/ac1e8a0758b6/41598_2024_74107_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6648/11447234/ce1e3b887022/41598_2024_74107_Fig9_HTML.jpg

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本文引用的文献

1
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2
Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.硅和二氧化硅蚀刻机制在用于纳米级图案的CF4/C4F8/Ar电感耦合等离子体中的应用
J Nanosci Nanotechnol. 2015 Oct;15(10):8340-7. doi: 10.1166/jnn.2015.11256.