Fu Wei, John Mark, Maddumapatabandi Thathsara D, Bussolotti Fabio, Yau Yong Sean, Lin Ming, Johnson Goh Kuan Eng
Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03 138634, Singapore.
Department of Physics, National University of Singapore, 2 Science Drive 3 117551, Singapore.
ACS Nano. 2023 Sep 12;17(17):16348-16368. doi: 10.1021/acsnano.3c04581. Epub 2023 Aug 30.
The manipulation of edge configurations and structures in atomically-thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges) as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc.). These edge-rich TMD layers offer versatile candidates for probing the physical and chemical properties and exploring potential applications in electronics, optoelectronics, catalysis, sensing, and quantum technologies. In this Review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of distinct properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this Review is to motivate further research and development efforts to use CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
近年来，通过调控原子级薄的过渡金属二硫属化物（TMDs）的边缘构型和结构来实现多功能化已引起了广泛关注。化学气相沉积（CVD）方法已显示出在TMD边缘工程中用于构建原子边缘构型（1H、1T或1T'-锯齿形或扶手椅形边缘）以及各种边缘形态（一维纳米带、二维树枝状、三维螺旋等）的潜力。这些富含边缘的TMD层为探究物理和化学性质以及探索在电子学、光电子学、催化、传感和量子技术等领域的潜在应用提供了多种候选材料。在本综述中，我们概述了利用CVD调控TMD原子边缘和富含边缘结构的当前技术水平。我们强调了与这些边缘构型和结构相关的广泛独特性质，并深入探讨了此类边缘功能化晶体所带来的机遇。本综述的目的是激发进一步的研发努力，将CVD作为一种可扩展的方法来利用这种晶体边缘工程的优势。
