Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
Chem Soc Rev. 2015 May 7;44(9):2744-56. doi: 10.1039/c4cs00256c. Epub 2014 Oct 20.
In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.
近年来，二维（2D）纳米材料领域取得了许多突破，其中过渡金属二卤化物（TMDs）因其与严格定义的维度相关的异常性质而引起了极大的关注。具有广义公式 MX2 的 TMD 材料，其中 M 是过渡金属，X 是硫属元素，代表了 2D 系统中一个多样化且尚未充分开发的来源。已证明半导体 TMD 单层，如 MoS2、MoSe2、WSe2 和 WS2，可用于未来的电子学和光电学。2D TMD 的奇异电子特性和高比表面积为各种领域提供了无限的潜力，包括传感、催化和储能应用。最近，化学气相沉积技术（CVD）显示出了很大的潜力，可以生成具有可扩展尺寸、可控厚度和优异电子性能的高质量 TMD 层。已经获得了从单到少数层 TMD 薄膜的晶圆级沉积。尽管在 CVD 合成 TMD 方面取得了初步成功，但对扩展方法的大量研究为取代掺杂、单层合金的形成以及 TMD 堆叠结构或超晶格的形成开辟了新的途径。在本教程综述中，我们将介绍通过 CVD 方法合成单层 TMD 的最新进展。
