低温电迁移作用下铜铜接头中的再结晶与晶粒生长
Recrystallization and Grain Growth in Cu-Cu Joints under Electromigration at Low Temperatures.
作者信息
Yang Shih-Chi, Tran Dinh-Phuc, Chen Chih
机构信息
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
出版信息
Materials (Basel). 2023 Aug 25;16(17):5822. doi: 10.3390/ma16175822.
The behavior of recrystallization and grain growth was examined in Cu-Cu joints during electromigration at 150 °C. Recrystallization and grain growth were observed in all the joints after electromigration for 9000 h. Voiding was formed in Cu current-feeding lines and in bonding interfaces, and resistance increased with time due to the void formation. However, instead of rising abruptly, the resistance of certain Cu joints dropped after 7000 h. Microstructural analysis revealed that a large grain growth occurred in these joints at 150 °C, and the bonding interface was eliminated. Therefore, the electromigration lifetime can be prolonged for these joints.
在150°C的电迁移过程中，对铜-铜接头的再结晶和晶粒生长行为进行了研究。在电迁移9000小时后，所有接头中均观察到再结晶和晶粒生长。空洞在铜馈电线和键合界面中形成，并且由于空洞的形成，电阻随时间增加。然而，某些铜接头的电阻在7000小时后并未突然上升，而是下降了。微观结构分析表明，这些接头在150°C时发生了大量晶粒生长，键合界面消失。因此，这些接头的电迁移寿命可以延长。
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