• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

模板介导的氧化铝纳米颗粒形态对通过热交换法生产蓝宝石晶圆的影响。

Effect of Template-Mediated Alumina Nanoparticle Morphology on Sapphire Wafer Production via Heat Exchange Method.

作者信息

Xie Yadian, Xue Miaoxuan, Gao Lanxing, Hou Yanqing, Yang Bo, Tong Xin

机构信息

Guizhou Provincial Key Laboratory in High Education Institutions of Low-Dimensional Materials and Environmental and Ecological Governance, Key Laboratory of Low-Dimensional Materials and Big Data, College of Chemical Engineering, Guizhou Minzu University, Guiyang 550025, China.

Faculty of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China.

出版信息

Materials (Basel). 2023 Aug 30;16(17):5938. doi: 10.3390/ma16175938.

DOI:10.3390/ma16175938
PMID:37687630
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10488677/
Abstract

The sapphire crystal, the most commonly used LED substrate material, has excellent optical and chemical properties and has rapidly developed in recent years. However, the challenge of growing large-size sapphire crystals remains. This paper presents a novel approach using alumina nanoparticles synthesized with abietic acid as a template to enhance sapphire growth via the heat exchange method. This study explores the effects of temperature, time, and template amount on the structure and morphology of the synthesized alumina nanoparticles. The results show that the morphology of the raw material, particularly spherical alumina nanoparticles, positively affects the quality and yield stability of sapphire products. Furthermore, the light output power of GaN-based LED chips made with the experimentally fabricated sapphire substrate increased from 3.47 W/µm to 3.71 W/µm, a 6.9% increase compared to commercially available sapphire substrates. This research highlights the potential of using abietic acid as a template for alumina nanoparticle synthesis and their application in sapphire growth for LED production.

摘要

蓝宝石晶体是最常用的LED衬底材料,具有优异的光学和化学性能,近年来发展迅速。然而,生长大尺寸蓝宝石晶体仍然面临挑战。本文提出了一种新方法,以松香酸为模板合成氧化铝纳米颗粒,通过热交换法促进蓝宝石生长。本研究探讨了温度、时间和模板用量对合成氧化铝纳米颗粒结构和形态的影响。结果表明,原料的形态,特别是球形氧化铝纳米颗粒,对蓝宝石产品的质量和产量稳定性有积极影响。此外,用实验制备的蓝宝石衬底制成的GaN基LED芯片的光输出功率从3.47 W/µm提高到3.71 W/µm,与市售蓝宝石衬底相比增加了6.9%。本研究突出了使用松香酸作为氧化铝纳米颗粒合成模板及其在LED生产蓝宝石生长中的应用潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/39a5d700626c/materials-16-05938-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/5487c5a8bef1/materials-16-05938-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/bd7d0ee07c11/materials-16-05938-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/3fe6ab372ec3/materials-16-05938-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/39a5d700626c/materials-16-05938-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/5487c5a8bef1/materials-16-05938-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/bd7d0ee07c11/materials-16-05938-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/3fe6ab372ec3/materials-16-05938-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4e9/10488677/39a5d700626c/materials-16-05938-g004.jpg

相似文献

1
Effect of Template-Mediated Alumina Nanoparticle Morphology on Sapphire Wafer Production via Heat Exchange Method.模板介导的氧化铝纳米颗粒形态对通过热交换法生产蓝宝石晶圆的影响。
Materials (Basel). 2023 Aug 30;16(17):5938. doi: 10.3390/ma16175938.
2
Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching.无掩模化学刻蚀制备银纳米颗粒图形化蓝宝石衬底 GaN 基发光二极管的性能。
Nanoscale Res Lett. 2013 Apr 8;8(1):157. doi: 10.1186/1556-276X-8-157.
3
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.应变弛豫对采用溅射AlN成核层在4英寸蓝宝石衬底上生长的InGaN/GaN绿色发光二极管性能的影响。
Sci Rep. 2019 Mar 5;9(1):3447. doi: 10.1038/s41598-019-40120-9.
4
Joining Alumina and Sapphire by Growing Aluminium Borate Whiskers In-Situ, and the Whiskers' Orientation Relationship with the Sapphire Substrate.通过原位生长硼酸铝晶须实现氧化铝与蓝宝石的连接以及晶须与蓝宝石衬底的取向关系。
Materials (Basel). 2020 Jan 1;13(1):175. doi: 10.3390/ma13010175.
5
Analysis of continuous laser-irradiation resistance of liquid-crystal optical switch based on sapphire-substrate GaN.基于蓝宝石衬底氮化镓的液晶光开关的连续激光辐照抗性分析
Appl Opt. 2024 Jun 1;63(16):4396-4404. doi: 10.1364/AO.523776.
6
Characteristics of ZnO nanowall structures grown on GaN template using organometallic chemical vapor deposition.使用有机金属化学气相沉积法在氮化镓模板上生长的氧化锌纳米壁结构的特性
J Nanosci Nanotechnol. 2008 Aug;8(8):3851-6. doi: 10.1166/jnn.2008.181.
7
Vertical InGaN light-emitting diodes with a sapphire-face-up structure.具有蓝宝石面朝上结构的垂直氮化铟镓发光二极管。
Opt Express. 2012 Jan 2;20(1):A119-24. doi: 10.1364/oe.20.00a119.
8
Vertical InGaN light-emitting diode with a retained patterned sapphire layer.具有保留图案化蓝宝石衬底的垂直氮化铟镓发光二极管。
Opt Express. 2012 Nov 5;20 Suppl 6:A1019-25. doi: 10.1364/OE.20.0A1019.
9
Vertical InGaN light-emitting diode with a retained patterned sapphire layer.具有保留图案化蓝宝石衬底的垂直氮化铟镓发光二极管。
Opt Express. 2012 Nov 5;20(23):A1019-25.
10
Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.蓝宝石衬底厚度对450nm InGaN/GaN多量子阱发光二极管特性的影响
J Nanosci Nanotechnol. 2015 Jul;15(7):5140-3. doi: 10.1166/jnn.2015.10360.

本文引用的文献

1
Preparation of functionalized porous nano-γ-AlO powders employing colophony extract.采用松香提取物制备功能化多孔纳米γ-氧化铝粉末。
Biotechnol Rep (Amst). 2014 Jul 21;4:21-29. doi: 10.1016/j.btre.2014.07.001. eCollection 2014 Dec.
2
Growth Behavior of High Density Al2O3 Layer Prepared by Using Cyclic Chemical Vapor Deposition Technology.利用循环化学气相沉积技术制备的高密度Al2O3层的生长行为
J Nanosci Nanotechnol. 2015 Jul;15(7):5232-7. doi: 10.1166/jnn.2015.10390.