Zhang Song, Zuo Kaixin, Lu Pengjian, Xu Qingfang, Yang Meijun, Liu Kai, Tu Rong
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
School of Materials Science and Engineering, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China.
RSC Adv. 2023 Sep 7;13(38):26869-26878. doi: 10.1039/d3ra03335j. eCollection 2023 Sep 4.
In the integrated circuit industry, metal liquids are frequently in contact with chemical vapor deposited (CVD) SiC, and it is important to understand the interactions between CVD-SiC and metal droplets. In this study, the wetting behavior of Al on a highly oriented SiC surface was investigated, and the contact angle could be controlled from 6° to 153° at a wetting temperature () of 1573-1773 K; the obtained contact angle range was larger than that of polycrystalline silicon carbide ( = 873-1473 K, 9-113°) and single crystal silicon carbide ( = 873-1473 K, 31-92°). The presence of many dislocations at the Al/SiC interface increased the interfacial energy, resulting in a greater contact angle for Al on the 〈111〉-oriented SiC coating surface than on the 〈110〉 one.
在集成电路行业中，金属液体经常与化学气相沉积（CVD）的碳化硅接触，了解CVD-SiC与金属液滴之间的相互作用非常重要。在本研究中，研究了铝在高度取向的SiC表面上的润湿行为，在1573 - 1773 K的润湿温度（）下，接触角可控制在6°至153°之间；获得的接触角范围大于多晶碳化硅（ = 873 - 1473 K，9 - 113°）和单晶碳化硅（ = 873 - 1473 K，31 - 92°）的接触角范围。Al/SiC界面处大量位错的存在增加了界面能，导致铝在〈111〉取向的SiC涂层表面上的接触角大于在〈110〉取向的SiC涂层表面上的接触角。
