Sanyal Dipto Arindam, Mondal Liton, Hossain Jaker, Rashid M Mamunur, Hossain M Khalid, Roy Nepal C, Rashid Talukder Mamunur
Plasma Science and Technology Lab, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh.
Plasma-processed Functional Materials Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh.
ChemistryOpen. 2023 Sep;12(9):e202300067. doi: 10.1002/open.202300067.
Copper iodide (CuI) thin films were prepared on a glass substrate by a facile high pressure (HP)-PECVD method at room temperature. For this, CuI powder was dissolved in CH CN. The CuI vapor with plasma was investigated by Optical Emission Spectroscopic (OES) data for identifying the species in the plasma. The XRD study reveals the polycrystalline nature of the films. The SEM analyses indicate the homogeneity of the films. The EDS mapping confirms that the thin films mostly consisted of carbon followed by nitrogen, copper and iodine, respectively. The band gaps of CuI thin films were in the range of ~2.71-3.14 eV. The high transmittance and band gap engineering in HP-PECVD-synthesized CuI thin films indicates their potential use as window and hole transport layers in low cost solar cells.
通过简便的室温高压（HP）-PECVD 方法在玻璃基板上制备了碘化铜（CuI）薄膜。为此，将 CuI 粉末溶解在 CH CN 中。利用光发射光谱（OES）数据研究了含等离子体的 CuI 蒸气，以识别等离子体中的物种。XRD 研究揭示了薄膜的多晶性质。SEM 分析表明薄膜具有均匀性。EDS 映射证实薄膜主要分别由碳、氮、铜和碘组成。CuI 薄膜的带隙在约 2.71 - 3.14 eV 范围内。HP-PECVD 合成的 CuI 薄膜的高透过率和带隙工程表明它们在低成本太阳能电池中作为窗口和空穴传输层具有潜在用途。
