Kumar Navneet, Yanguas-Gil Angel, Daly Scott R, Girolami Gregory S, Abelson John R
Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
J Am Chem Soc. 2008 Dec 31;130(52):17660-1. doi: 10.1021/ja807802r.
We introduce the use of a growth inhibitor to enhance thin film conformality in low temperature chemical vapor deposition. Films of TiB(2) grown from the single source precursor Ti(BH(4))(3)(dme) are much more highly conformal when grown in the presence of one of the film growth byproducts, 1,2-dimethoxyethane (dme). This effect can be explained in terms of two alternative inhibitory mechanisms: one involving blocking of surface reactive sites, which is equivalent to reducing the rate of the forward reaction leading to film growth, the other analogous to Le Chatelier's principle, in which the addition of a reaction product increases the rate of the back reaction. The reduction in growth rate corresponds to a reduction in the sticking probability of the precursor, which enhances conformality by enabling the precursor to diffuse deeper into a recessed feature before it reacts.
我们介绍了一种生长抑制剂的用途，以增强低温化学气相沉积中薄膜的保形性。由单源前驱体Ti(BH₄)₃(dme)生长的TiB₂薄膜，在薄膜生长副产物之一1,2 - 二甲氧基乙烷（dme）存在的情况下生长时，保形性要高得多。这种效应可以用两种不同的抑制机制来解释：一种涉及表面反应位点的阻断，这相当于降低导致薄膜生长的正向反应速率；另一种类似于勒夏特列原理，即添加反应产物会增加逆向反应速率。生长速率的降低对应于前驱体附着概率的降低，这通过使前驱体在反应之前能够更深地扩散到凹陷特征中而增强了保形性。
