Neisiani Zahra Sadeghi, Khaje Mahdi, Majd Abdollah Eslami, Mehrfar Amir Hossein
Appl Opt. 2023 Jun 1;62(16):4213-4220. doi: 10.1364/AO.486493.
Photoconductive detectors that use intrinsic absorbent materials include a wide range of detectors. In this paper, a photoconductive detector is fabricated using a titanium dioxide ( ) thin film. The mechanism of the photodetector is changed to the photogating mechanism by transferring monolayer graphene onto the thin film, which shows a great responsivity with a slight change in the fabrication process. Since the maximum responsivity can be obtained by applying and adjusting the gate voltage, the gate voltage is set in all experiments, and the effect of the gate voltage is investigated in both detectors. It is observed that by increasing the gate voltage, the responsivity of the photogating detector increases to 40 A/W at a gate voltage of 15 V. However, in the photoconductive detector, the increase in the gate voltage does not have a particular effect on the detector responsivity. In the photogating detector, the increase in the responsivity due to the increase in the gate voltage is attributed to applying the gate voltage to the graphene layer and not the absorber layer. The efficiency of both detectors is confirmed up to a frequency of 5 kHz.
使用本征吸收材料的光电导探测器包括多种探测器。在本文中，使用二氧化钛（ ）薄膜制造了一种光电导探测器。通过将单层石墨烯转移到 薄膜上，光电探测器的机制转变为光闸机制，这在制造过程中只需轻微改变就能显示出很高的响应度。由于通过施加和调整栅极电压可以获得最大响应度，因此在所有实验中都设置了栅极电压，并研究了两种探测器中栅极电压的影响。观察到，通过增加栅极电压，光闸探测器的响应度在15V的栅极电压下增加到40 A/W。然而，在光电导探测器中，栅极电压的增加对探测器响应度没有特别的影响。在光闸探测器中，由于栅极电压增加导致的响应度增加归因于对石墨烯层而不是吸收层施加了栅极电压。两种探测器的效率在高达5kHz的频率下都得到了证实。
