Mikulicz Monika, Rygała Michał, Smołka Tristan, Janczak Mikołaj, Badura Mikołaj, Łozińska Adriana, Wolf Adriana, Emmerling Monika, Ściana Beata, Höfling Sven, Czyszanowski Tomasz, Sęk Grzegorz, Motyka Marcin
Opt Express. 2023 Jul 31;31(16):26898-26909. doi: 10.1364/OE.496261.
We present an optical spectroscopic study of InGaAs/AlInAs active region of quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated by reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties of structures before and after processing the gratings. Our results demonstrate a significant increase of the photoluminescence intensity related to intersubband transitions in the mid-infrared, which is attributed to coupling with the grating modes via so called photonic Fano resonances. Our findings demonstrate a promising method for enhancing the emission in optoelectronic devices operating in a broad range of application-relevant infrared.
我们展示了对通过低压金属有机气相外延生长的量子级联激光器的InGaAs/AlInAs有源区进行的光学光谱研究，并结合了通过反应离子蚀刻制造的亚波长光栅。利用傅里叶变换光致发光测量来比较光栅加工前后结构的发射特性。我们的结果表明，与中红外带间跃迁相关的光致发光强度显著增加，这归因于通过所谓的光子法诺共振与光栅模式的耦合。我们的发现证明了一种有前景的方法，可用于增强在广泛的与应用相关的红外波段工作的光电器件中的发射。
