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相变存储材料的微观结构表征、相变及器件应用

Microstructure characterization, phase transition, and device application of phase-change memory materials.

作者信息

Jiang Kai, Li Shubing, Chen Fangfang, Zhu Liping, Li Wenwu

机构信息

School of Arts and Sciences, Shanghai Dianji University, Shanghai, China.

Department of Physics, East China Normal University, Shanghai, China.

出版信息

Sci Technol Adv Mater. 2023 Aug 30;24(1):2252725. doi: 10.1080/14686996.2023.2252725. eCollection 2023.

Abstract

Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.

摘要

相变存储器(PCM)是一种新型非易失性存储技术,最近被开发用作计算机系统中的存储级存储器。此外,PCM在非冯·诺依曼计算(如神经形态计算和内存计算)中的应用也正在研究中。尽管基于PCM的器件已得到广泛研究,但相变器件的电学、热学和结构动力学方面仍存在一些问题。本文针对PCM器件,对PCM材料进行了全面综述,包括支撑读写操作的主要PCM器件机制、基于物理的建模方法以及对纳米级PCM器件中诸多特性的实验表征。最后,本综述将对一些未解决的挑战提出预测,并突出进一步研究的领域。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f95e/10512918/56696b01cdba/TSTA_A_2252725_UF0001_OC.jpg

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