But Dmytro B, Ikamas Kȩstutis, Kołaciński Cezary, Chernyadiev Aleksandr V, Vizbaras Domantas, Knap Wojciech, Lisauskas Alvydas
CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142, Warsaw, Poland.
Institute of Applied Electrodynamics and Telecommunications, Vilnius University, LT-10257, Vilnius, Lithuania.
Sci Rep. 2023 Sep 27;13(1):16161. doi: 10.1038/s41598-023-43194-8.
In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic. The radiation is out-coupled through the substrate side using a hyper-hemispheric silicon lens. The first source is optimized for 200 GHz and radiates up to 0.525 mW of propagating power. The second source emits up to 0.325 mW at 260 GHz. We demonstrate that in these devices, feedback radiation produces the change in bias current, the magnitude of which can reach up to several percent compared to the bias current itself, enabling feedback interferometric measurements. We demonstrate the applicability of feedback interferometry to perform coherent reflection-type raster-scan imaging.
在这项工作中，我们展示了采用130纳米硅锗双极互补金属氧化物半导体（BiCMOS）技术实现的紧凑型太赫兹发射器中的自混频效应。这些器件基于具有在基波谐波处优化发射频率的差分考毕兹振荡器拓扑结构。辐射通过使用超半球形硅透镜从衬底侧外耦合。第一个源针对200吉赫兹进行了优化，辐射的传播功率高达0.525毫瓦。第二个源在260吉赫兹时发射功率高达0.325毫瓦。我们证明，在这些器件中，反馈辐射会导致偏置电流发生变化，与偏置电流本身相比，其幅度可达百分之几，从而实现反馈干涉测量。我们展示了反馈干涉测量在执行相干反射型光栅扫描成像方面的适用性。
