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一种采用电流源切换拓扑结构的具有高带宽比的7/24GHz CMOS压控振荡器。

A 7/24-GHz CMOS VCO with High Band Ratio Using a Current-Source Switching Topology.

作者信息

Wang Sen, Xiao Chang-Yuan

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2016 May;63(5):790-795. doi: 10.1109/TUFFC.2016.2536702. Epub 2016 Mar 1.

Abstract

In this paper, a 7/24-GHz dual-band voltage-controlled oscillator (DVCO) using a current-source switching topology is designed, implemented, and verified in a 0.18-μm CMOS technology for C-band and K-band radar applications. The low- and high-frequency bands are obtained by the Colpitts mode oscillation and the cross-coupled pairs (CCP) mode oscillation, respectively. Unlike conventional dual-band VCOs realized by resonator-switching topologies, the proposed VCO is based on the composite Colpitts and CCP architecture to avoid additional losses in the resonator, or lower its power consumption. The fabricated VCO occupies a chip area of 0.95×0.71 mm2 including all testing pads. Measurements show that the VCO operating in the Colpitts mode provides a phase noise of -112.5 dBc/Hz at 1 MHz offset from the 7.4-GHz oscillation frequency under 7.5-mW power consumption. When the VCO operating in the CCP mode, it provides a phase noise of -99.9 dBc/Hz at 1 MHz offset from the 24-GHz oscillation frequency with 9.7-mW power dissipation. Moreover, the DVCO achieves a high band ratio (fH/fL=24/7) of 3.43. To the authors' best knowledge, the design features the highest band ratio, low power dissipation, and comparable electrical performances among previously reported DVCOs.

摘要

本文设计、实现并验证了一种采用电流源切换拓扑结构的7/24 GHz双频段压控振荡器(DVCO),该振荡器采用0.18μm CMOS工艺,用于C波段和K波段雷达应用。低频段和高频段分别通过考毕兹模式振荡和交叉耦合对(CCP)模式振荡获得。与通过谐振器切换拓扑实现的传统双频段VCO不同,所提出的VCO基于复合考毕兹和CCP架构,以避免谐振器中的额外损耗或降低其功耗。所制造的VCO包括所有测试焊盘在内的芯片面积为0.95×0.71 mm2。测量结果表明,在考毕兹模式下工作的VCO在7.5 mW功耗下,在偏离7.4 GHz振荡频率1 MHz处提供-112.5 dBc/Hz的相位噪声。当VCO在CCP模式下工作时,在偏离24 GHz振荡频率1 MHz处提供-99.9 dBc/Hz的相位噪声,功耗为9.7 mW。此外,该DVCO实现了3.43的高带宽比(fH/fL=24/7)。据作者所知,该设计在先前报道的DVCO中具有最高的带宽比、低功耗和可比的电气性能。

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