Controllable Chemical Vapor Deposition Growth of High-Mobility BiOTe Nanosheets.

Air-stable bismuth oxychalcogenides (BiOX) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although BiOSe is commonly used, there have been few reported uses of BiOTe because of its challenging preparation process. This study aimed to synthesize two-dimensional BiOTe nanosheets using the chemical vapor deposition method. BiOTe nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared BiOTe single crystal exhibited a Hall mobility of 496 cm V s at 300 K, which reached 5000 cm V s at 2 K. The results expand the BiOX family and show BiOTe to be a promising candidate for use in highly efficient electronic devices.