Liu Hang, Sun Ruofan, Lu Xu
CCRC, Division of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
KAUST Solar Center (KSC), PSE, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia.
Inorg Chem. 2023 Oct 16;62(41):16752-16758. doi: 10.1021/acs.inorgchem.3c02033. Epub 2023 Oct 2.
Air-stable bismuth oxychalcogenides (BiOX) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although BiOSe is commonly used, there have been few reported uses of BiOTe because of its challenging preparation process. This study aimed to synthesize two-dimensional BiOTe nanosheets using the chemical vapor deposition method. BiOTe nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared BiOTe single crystal exhibited a Hall mobility of 496 cm V s at 300 K, which reached 5000 cm V s at 2 K. The results expand the BiOX family and show BiOTe to be a promising candidate for use in highly efficient electronic devices.
空气稳定的氧族铋化物（BiOX）在高性能电子器件中表现出优异的电学性能和超高迁移率。然而，尽管BiOSe被广泛使用，但由于BiOTe的制备过程具有挑战性，其应用报道较少。本研究旨在通过化学气相沉积法合成二维BiOTe纳米片。通过调整生长条件（如温度）获得了不同厚度的BiOTe纳米片。所制备的BiOTe单晶在300 K时的霍尔迁移率为496 cm² V⁻¹ s⁻¹，在2 K时达到5000 cm² V⁻¹ s⁻¹。这些结果扩展了BiOX家族，并表明BiOTe是用于高效电子器件的有前途的候选材料。
