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用于电子皮肤和伺服旋转角度控制的高性能柔性AgSe薄膜器件化

Deviceization of high-performance and flexible AgSe films for electronic skin and servo rotation angle control.

作者信息

Chen Yue-Xing, Shi Xiao-Lei, Zhang Jun-Ze, Nisar Mohammad, Zha Zhong-Zhao, Zhong Zi-Nan, Li Fu, Liang Guang-Xing, Luo Jing-Ting, Li Meng, Cao Tianyi, Liu Wei-Di, Xu Dong-Yan, Zheng Zhuang-Hao, Chen Zhi-Gang

机构信息

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.

School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4000, Australia.

出版信息

Nat Commun. 2024 Sep 27;15(1):8356. doi: 10.1038/s41467-024-52680-0.

Abstract

AgSe shows significant potential for near-room-temperature thermoelectric applications, but its performance and device design are still evolving. In this work, we design a novel flexible AgSe thin-film-based thermoelectric device with optimized electrode materials and structure, achieving a high output power density of over 65 W m and a normalized power density up to 3.68 μW cm K at a temperature difference of 42 K. By fine-tuning vapor selenization time, we strengthen the (013) orientation and carrier mobility of AgSe films, reducing excessive Ag interstitials and achieving a power factor of over 29 μW cm K at 393 K. A protective layer boosts flexibility of the thin film, retaining 90% performance after 1000 bends at 60°. Coupled with p-type SbTe thin films and rational simulations, the device shows rapid human motion response and precise servo motor control, highlighting the potential of high-performance AgSe thin films in advanced applications.

摘要

AgSe在近室温热电应用中显示出巨大潜力,但其性能和器件设计仍在不断发展。在这项工作中,我们设计了一种基于AgSe薄膜的新型柔性热电装置,优化了电极材料和结构,在42 K的温差下实现了超过65 W m的高输出功率密度和高达3.68 μW cm K的归一化功率密度。通过微调气相硒化时间,我们增强了AgSe薄膜的(013)取向和载流子迁移率,减少了过量的Ag间隙原子,并在393 K时实现了超过29 μW cm K的功率因子。一层保护层提高了薄膜的柔韧性,在60°下弯曲1000次后仍保留90%的性能。与p型SbTe薄膜和合理的模拟相结合,该装置显示出快速的人体运动响应和精确的伺服电机控制,突出了高性能AgSe薄膜在先进应用中的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0251/11436659/a63742988868/41467_2024_52680_Fig1_HTML.jpg

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