Park Jin Soo, Jung Soo Young, Kim Dong Hun, Park Jung Ho, Jang Ho Won, Kim Tae Geun, Baek Seung-Hyub, Lee Byung Chul
Bionics Research Center, Korea Institute of Science and Technology, Seoul, 02792 Republic of Korea.
Department of Electrical Engineering, Korea University, Seoul, 02841 Republic of Korea.
Microsyst Nanoeng. 2023 Oct 2;9:122. doi: 10.1038/s41378-023-00595-z. eCollection 2023.
Due to its additional frequency response, dual-frequency ultrasound has advantages over conventional ultrasound, which operates at a specific frequency band. Moreover, a tunable frequency from a single transducer enables sonographers to achieve ultrasound images with a large detection area and high resolution. This facilitates the availability of more advanced techniques that simultaneously require low- and high-frequency ultrasounds, such as harmonic imaging and image-guided therapy. In this study, we present a novel method for dual-frequency ultrasound generation from a ferroelectric piezoelectric micromachined ultrasound transducer (PMUT). Uniformly designed transducer arrays can be used for both deep low-resolution imaging and shallow high-resolution imaging. To switch the ultrasound frequency, the only requirement is to tune a DC bias to control the polarization state of the ferroelectric film. Flextensional vibration of the PMUT membrane strongly depends on the polarization state, producing low- and high-frequency ultrasounds from a single excitation frequency. This strategy for dual-frequency ultrasounds meets the requirement for either multielectrode configurations or heterodesigned elements, which are integrated into an array. Consequently, this technique significantly reduces the design complexity of transducer arrays and their associated driving circuits.
由于其额外的频率响应,双频超声相比于在特定频段工作的传统超声具有优势。此外,单个换能器的可调频率使超声检查人员能够获得具有大检测区域和高分辨率的超声图像。这有利于同时需要低频和高频超声的更先进技术的应用,如谐波成像和图像引导治疗。在本研究中,我们提出了一种从铁电压电微机电超声换能器(PMUT)产生双频超声的新方法。均匀设计的换能器阵列可用于深部低分辨率成像和浅部高分辨率成像。要切换超声频率,唯一的要求是调整直流偏置以控制铁电薄膜的极化状态。PMUT膜的弯曲振动强烈依赖于极化状态,从单一激励频率产生低频和高频超声。这种双频超声策略满足了对集成到阵列中的多电极配置或异质设计元件的要求。因此,该技术显著降低了换能器阵列及其相关驱动电路的设计复杂性。