Wang Haoran, Yang Hao, Chen Zhenfang, Zheng Qincheng, Jiang Huabei, Feng Philip X-L, Xie Huikai
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA.
Department of Medical Engineering, University of South Florida, Tampa, FL 33620, USA.
J Microelectromech Syst. 2021 Oct;30(5):770-782. doi: 10.1109/jmems.2021.3096733. Epub 2021 Jul 26.
This paper presents a dual-frequency piezoelectric micromachined ultrasonic transducer (pMUT) array based on thin ceramic PZT for endoscopic photoacoustic imaging (PAI) applications. With a chip size of 7 × 7 mm, the pMUT array consists of 256 elements, half of which have a lower resonant frequency of 1.2 MHz and the other half have a higher resonant frequency of 3.4 MHz. Ceramic PZT, with outstanding piezoelectric coefficients, has been successfully thinned down to a thickness of only 4 by using wafer bonding and chemical mechanical polishing (CMP) techniques and employed as the piezoelectric layer of the pMUT elements. The diaphragm diameters of the lower-frequency and higher-frequency elements are 220 m and 120 m, respectively. The design methodology, multiphysics modeling, fabrication process, and characterization of the pMUTs are presented in detail. The fabricated pMUT array has been fully characterized via electrical, mechanical, and acoustic measurements. The measured maximum responsivities of the lower- and higher- frequency elements reach 110 nm/V and 30 nm/V at their respective resonances. The measured cross-couplings of the lower-frequency elements and higher-frequency elements are about 9% and 5%, respectively. Furthermore, PAI experiments with pencil leads embedded into an agar phantom have been conducted, which clearly shows the advantages of using dual-frequency pMUT arrays to provide comprehensive photoacoustic images with high spatial resolution and large signal-to-noise ratio simultaneously.
本文介绍了一种基于薄陶瓷PZT的双频压电微机械超声换能器(pMUT)阵列,用于内窥镜光声成像(PAI)应用。该pMUT阵列芯片尺寸为7×7mm,由256个元件组成,其中一半元件的较低谐振频率为1.2MHz,另一半元件的较高谐振频率为3.4MHz。具有出色压电系数的陶瓷PZT已通过晶圆键合和化学机械抛光(CMP)技术成功减薄至仅4的厚度,并用作pMUT元件的压电层。低频和高频元件的振膜直径分别为220μm和120μm。详细介绍了pMUT的设计方法、多物理场建模、制造工艺和特性。通过电学、力学和声学测量对制造的pMUT阵列进行了全面表征。在各自的谐振频率下,测量得到的低频和高频元件的最大响应率分别达到110nm/V和30nm/V。测量得到的低频元件和高频元件的交叉耦合分别约为9%和5%。此外,还进行了将铅笔芯嵌入琼脂仿体的PAI实验,清楚地展示了使用双频pMUT阵列同时提供具有高空间分辨率和大信噪比的综合光声图像的优势。