Liang Zhihao, Wu Weijing, Fu Xiao, Ning Honglong, Xu Wei, Xiong Xin, Qiu Tian, Luo Cheng, Yao Rihui, Peng Junbiao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China.
Department of Intelligent Manufacturing, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China.
J Phys Chem Lett. 2023 Oct 19;14(41):9245-9249. doi: 10.1021/acs.jpclett.3c02462. Epub 2023 Oct 9.
In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrO high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal-insulator-metal (MIM) and TFT devices and carried out flexible tests. The test results show that the mixed dielectric layer attains a leakage current of 3.6 × 10 A under the bending radius of 5 mm. In the application of the TFT, the device still has good performance after 10 000 bends with a mobility of 3.1 cm V s, an / of 1.4 × 10, a threshold voltage of 3.3 V, and a threshold swing of 0.20 V/decade. In addition, the average transmittance of the hybrid dielectric layer in the visible range is 90.8%. Therefore, high-entropy PVA hybrid films have high transparency, low leakage current, and good bending resistance and have broad application prospects in transparent and flexible devices.
近年来，柔性薄膜晶体管（TFT）越来越受到关注。因此，我们将HfMgTiYZrO高熵金属氧化物与聚乙烯醇（PVA）有机材料相结合，制备了一种柔性介电层。我们制造了金属-绝缘体-金属（MIM）和TFT器件，并进行了柔性测试。测试结果表明，混合介电层在5 mm的弯曲半径下实现了3.6×10 A的漏电流。在TFT的应用中，该器件在10000次弯曲后仍具有良好的性能，迁移率为3.1 cm² V⁻¹ s⁻¹，Ion/Ioff为1.4×10⁶，阈值电压为3.3 V，阈值摆幅为0.20 V/十倍频程。此外，混合介电层在可见光范围内的平均透过率为90.8%。因此，高熵PVA混合薄膜具有高透明度、低漏电流和良好的抗弯曲性，在透明和柔性器件中具有广阔的应用前景。
