Li Yun-Qin, Zhang Xian, Shang Xiao, He Qi-Wen, Tang Dai-Song, Wang Xiao-Chun, Duan Chun-Gang
Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China.
Nano Lett. 2023 Nov 8;23(21):10013-10020. doi: 10.1021/acs.nanolett.3c03238. Epub 2023 Oct 19.
The realization of multiferroic materials offers the possibility of multifunctional electronic device design. However, the coupling between the multiferroicity and piezoelectricity in Janus materials is rarely reported. In this study, we propose a mechanism for manipulating valley physics by magnetization reversing and ferroelectric switching in multiferroic and piezoelectric material. The ferromagnetic VSiGeP monolayer exhibits a large valley polarization up to 100 meV, which can be effectively operated by reversing magnetization. Interestingly, the antiferromagnetic VSiGeP bilayers with AB and BA stacking configurations allow the coexistence of valley polarization and ferroelectricity, supporting the proposed strategy for manipulating valley physics via ferroelectric switching and interlayer sliding. In addition, the VSiGeP monolayer contains remarkable tunable piezoelectricity regulated by electron correlation . This study proposes a feasible idea for regulating valley polarization and a general design idea for multifunctional devices with multiferroic and piezoelectric properties, facilitating the miniaturization and integration of nanodevices.
多铁性材料的实现为多功能电子器件设计提供了可能性。然而，关于Janus材料中多铁性与压电性之间的耦合鲜有报道。在本研究中，我们提出了一种通过多铁性和压电材料中的磁化反转和铁电开关来操控谷物理的机制。铁磁VSiGeP单层展现出高达100 meV的大谷极化，可通过反转磁化有效地进行调控。有趣的是，具有AB和BA堆叠构型的反铁磁VSiGeP双层允许谷极化和铁电性共存，支持了通过铁电开关和层间滑动来操控谷物理的所提出策略。此外，VSiGeP单层包含由电子关联调节的显著可调压电性。本研究为调控谷极化提出了一个可行的想法，并为具有多铁性和压电特性的多功能器件提供了一个通用的设计思路，有助于纳米器件的小型化和集成化。
