Fan Guangxin, Wu Yanzhao, Tong Junwei, Deng Li, Yin Xiang, Tian Fubo, Zhang Xianmin
Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
Department of Physics, Freie Universität Berlin, Berlin 14195, Germany.
Phys Chem Chem Phys. 2024 Mar 20;26(12):9628-9635. doi: 10.1039/d3cp04739c.
Valley is used as a new degree of freedom for information encoding and storage. In this work, the valley and topological properties of the VSiGeP monolayer were studied by adjusting the value based on first-principles calculations. The VSiGeP monolayer remains in a ferromagnetic ground state regardless of the change in the value. The magnetic anisotropy of the VSiGeP monolayer is initially in-plane, and then turns out-of-plane with the increase in the value. Moreover, a topological phase transition is observed in the present VSiGeP monolayer with the increase in value from 0 to 3 eV, , the VSiGeP monolayer behaves as a bipolar magnetic semiconductor, a ferrovalley semiconductor, a half-valley metal characteristic, and a quantum anomalous Hall state. The mechanism of the topological phase transition behavior of the VSiGeP monolayer was analyzed. It was found that the variation in values would change the strength of the electronic correlation effect, resulting in the valley and topological properties. In addition, carrier doping was studied to design a valleytronic device using this VSiGeP monolayer. By doping 0.05 electrons per f.u., the VSiGeP monolayer with a value of 3 eV exhibits 100% spin polarization. This study indicates that the VSiGeP monolayer has potential applications in spintronic, valleytronic, and topological electronic nanodevices.
谷被用作信息编码和存储的新自由度。在这项工作中，基于第一性原理计算，通过调整 值研究了VSiGeP单层的谷和拓扑性质。无论 值如何变化，VSiGeP单层都保持在铁磁基态。VSiGeP单层的磁各向异性最初是面内的，然后随着 值的增加变为面外的。此外，随着 值从0增加到3 eV，在当前的VSiGeP单层中观察到拓扑相变，即VSiGeP单层表现为双极磁半导体、铁谷半导体、半谷金属特性和量子反常霍尔态。分析了VSiGeP单层拓扑相变行为的机制。发现 值的变化会改变电子关联效应的强度，从而导致谷和拓扑性质。此外，还研究了载流子掺杂，以使用这种VSiGeP单层设计一个谷电子器件。通过每f.u.掺杂0.05个电子， 值为3 eV的VSiGeP单层表现出100%的自旋极化。这项研究表明，VSiGeP单层在自旋电子学、谷电子学和拓扑电子纳米器件方面具有潜在应用。
