Wang Zichun, Pan Honggang, Zhou Baozeng
Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
Phys Chem Chem Phys. 2023 Nov 1;25(42):29098-29107. doi: 10.1039/d3cp03798c.
Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Due to the recent experimental breakthrough in two-dimensional materials, with the absence of hanging bonds on the surface and strong tolerance for lattice mismatch, heterogeneous integration of different two-dimensional materials provides a new opportunity for coupling between different physical properties. Here, we report the realization of nonvolatile magnetoelectric coupling in vdW sandwich heterostructure CuInPS/MnCl/CuInPS. Using first-principles calculations, we reveal that when interfacing with ferroelectric CuInPS, the Dirac half-metallic state of monolayer MnCl will be destroyed. Moreover, depending on the electrically polarized direction of CuInPS, MnCl can be a half-metal or a ferromagnetic semiconductor. We unveil that the obtained ferromagnetic semiconductor in MnCl can be attributed to the different gain and loss of electrons on the two adjacent Mn atoms due to the sublattice symmetry broken by interlayer coupling. The effects of interfacial magnetoelectric coupling on magnetic anisotropy and ferromagnetic Curie temperature of MnCl are also investigated, and a multiferroic memory based on this model is designed. Our work not only provides a promising way to design nonvolatile electrical control of magnetism but also renders monolayer MnCl an appealing platform for developing low-dimensional memory devices.
磁的电控制对于低能耗自旋电子学应用具有重大意义。由于二维材料最近的实验突破,其表面不存在悬挂键且对晶格失配具有很强的耐受性,不同二维材料的异质集成提供了一个耦合不同物理性质的新机会。在此,我们报道了在范德华夹心异质结构CuInPS/MnCl/CuInPS中实现非易失性磁电耦合。通过第一性原理计算,我们发现当与铁电体CuInPS界面接触时,单层MnCl的狄拉克半金属态将被破坏。此外,取决于CuInPS的电极化方向,MnCl可以是半金属或铁磁半导体。我们揭示了在MnCl中获得的铁磁半导体可归因于由于层间耦合破坏亚晶格对称性而导致的两个相邻Mn原子上电子的不同得失。还研究了界面磁电耦合对MnCl的磁各向异性和铁磁居里温度的影响,并基于此模型设计了一种多铁性存储器。我们的工作不仅为设计磁的非易失性电控制提供了一条有前景的途径,而且使单层MnCl成为开发低维存储器件的一个有吸引力的平台。