Tai Yu-Chan, Tzeng Wen-Yen, Lin Jhen-Dong, Kuo Yi-Hou, Chen Fu-Xiang Rikudo, Tu Ruei-Jhe, Huang Ming-Yang, Pai Shyh-Shii, Chang Nick Weihan, Tseng Sheng-Yang, Chen Chi, Lin Chun-Liang, Yabushita Atsushi, Cheng Shun-Jen, Luo Chih-Wei
Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.
Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan.
Nano Lett. 2023 Nov 22;23(22):10490-10497. doi: 10.1021/acs.nanolett.3c03251. Epub 2023 Nov 1.
The energy transfer (ET) between organic molecules and semiconductors is a crucial mechanism for enhancing the performance of semiconductor-based optoelectronic devices, but it remains undiscovered. Here, ultrafast optical pump-probe spectroscopy was utilized to directly reveal the ET between organic Alq molecules and Si semiconductors. Ultrathin SiO dielectric layers with a thickness of 3.2-10.8 nm were inserted between Alq and Si to prevent charge transfer. By means of the ET from Alq to Si, the SiO thickness-dependent relaxation dynamics of photoexcited carriers in Si have been unambiguously observed on the transient reflectivity change (Δ/) spectra, especially for the relaxation process on a time scale of 200-350 ps. In addition, these findings also agree with the results of our calculation in a model of long-range dipole-dipole interactions, which provides critical information for developing future optoelectronic devices.
有机分子与半导体之间的能量转移(ET)是提高基于半导体的光电器件性能的关键机制,但尚未被发现。在此,利用超快光泵浦-探测光谱直接揭示了有机Alq分子与Si半导体之间的能量转移。在Alq和Si之间插入厚度为3.2 - 10.8 nm的超薄SiO介电层以防止电荷转移。通过从Alq到Si的能量转移,在瞬态反射率变化(Δ/)光谱上明确观察到了Si中光激发载流子的SiO厚度依赖性弛豫动力学,特别是在200 - 350 ps时间尺度上的弛豫过程。此外,这些发现也与我们在长程偶极-偶极相互作用模型中的计算结果一致,这为开发未来的光电器件提供了关键信息。