Yoon Jiyeong, Choi Yejoo, Shin Changhwan
School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea.
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Nanotechnology. 2024 Jan 10;35(13). doi: 10.1088/1361-6528/ad0af8.
By adjusting the rising time in annealing ferroelectric HfO-based films, the grain size of the film can be controlled. In this study, we found that increasing the rising time from 10 to 30 s at an annealing temperature of 700 °C in Natmosphere resulted in improved ferroelectric switching speed. This is because the larger grain size reduces the internal resistance components, such as the grain bulk resistance and grain boundary resistance, of the HZO film. This in turn lowers the overall equivalent resistance. By minimizing the RC time constants, increasing the grain size plays a key role in improving the polarization switching speed of ferroelectric films.
通过调整铁电HfO基薄膜退火过程中的升温时间，可以控制薄膜的晶粒尺寸。在本研究中，我们发现在N气氛下，700℃退火温度时将升温时间从10秒增加到30秒会提高铁电开关速度。这是因为较大的晶粒尺寸降低了HZO薄膜的内部电阻成分，如晶粒体电阻和晶界电阻。这进而降低了整体等效电阻。通过最小化RC时间常数，增大晶粒尺寸在提高铁电薄膜的极化开关速度方面起着关键作用。
