IEEE Trans Biomed Circuits Syst. 2024 Apr;18(2):408-422. doi: 10.1109/TBCAS.2023.3333369. Epub 2024 Apr 1.
This article presents a local field potential (LFP)/action potential (AP) mode reconfigurable analog front-end (AFE) dedicated for the closed-loop vagus nerve stimulator (VNS). It combines an inverse electrical model of the intracranial electroencephalogram (iEEG) conducting in the brain tissues and been recorded at scalp as the extended electroencephalogram (EEEG). The AFE contains a LFP/AP mode reconfigurable EEEG preamplifier, a tunable integrator to compensate the effect of either the recording electrodes or head tissues, and an adder. The LFP/AP mode reconfigurable EEEG preamplifier consists of a tunable chopper-stabilized amplifier (CSA) and a 2nd-order tunable low pass filter (LPF). For better separation of LFP and AP signals, a high-order DC servo loop (DSL) characterized as a 2nd-order DSL in parallel with a 1st-order DSL is exploited in the tunable CSA to achieve a tunable high-pass frequency with a stopband attenuation slope (SAS) of +40 dB/dec. In addition, the tunable LPF can obtain a tunable low-pass frequency with a SAS of -40 dB/dec and provide additional 20 dB gain for AP signals. Fabricated in a SMIC 180 nm CMOS technology, and in the LFP band (0.5 Hz-200 Hz) and AP band (300 Hz-5 kHz), the measured mid-band gains of the LFP/AP mode reconfigurable EEEG preamplifier are 39.6 dB and 59.5 dB, the input-referred noises (IRNs) are 2.2 μVrms and 6.3 μVrms, the DC/in-band input impedances are 1.27/1.26 GΩ and 0.3/0.22 GΩ, respectively. The power consumption per channel AFE is 6.3 μW, and the die area is 1.4 mm × 0.25 mm.
本文提出了一种用于闭环迷走神经刺激器 (VNS) 的局部场电位 (LFP)/动作电位 (AP) 模式可重构模拟前端 (AFE)。它结合了颅内脑电图 (iEEG) 的逆电模型,该模型在脑组织中传导并在头皮上记录为扩展脑电图 (EEEG)。AFE 包含一个 LFP/AP 模式可重构 EEEG 前置放大器、一个可调积分器,用于补偿记录电极或头部组织的影响,以及一个加法器。LFP/AP 模式可重构 EEEG 前置放大器由一个可调斩波稳定放大器 (CSA) 和一个二阶可调低通滤波器 (LPF) 组成。为了更好地分离 LFP 和 AP 信号,在可调 CSA 中利用一种二阶 DSL 与一阶 DSL 并联的高阶直流伺服环 (DSL) 实现可调高通频率,带阻衰减斜率 (SAS) 为+40 dB/dec。此外,可调 LPF 可获得可调低通频率,SAS 为-40 dB/dec,并为 AP 信号提供额外的 20 dB 增益。该器件采用 SMIC 180nm CMOS 工艺制造,在 LFP 频段 (0.5 Hz-200 Hz) 和 AP 频段 (300 Hz-5 kHz) 下,LFP/AP 模式可重构 EEEG 前置放大器的中频增益分别为 39.6 dB 和 59.5 dB,输入参考噪声 (IRN) 分别为 2.2 μVrms 和 6.3 μVrms,直流/带内输入阻抗分别为 1.27/1.26 GΩ 和 0.3/0.22 GΩ。每个通道 AFE 的功耗为 6.3 μW,芯片面积为 1.4mm×0.25mm。