High-Performance Complementary Circuits from Two-Dimensional MoTe.

Two-dimensional (2D) materials hold great promise for future complementary metal-oxide semiconductor (CMOS) technology. However, the lack of effective methods to tune the Schottky barrier poses a challenge in constructing high-performance complementary circuits from the same material. Here, we reveal that the polarity of pristine MoTe field-effect transistors (FETs) with minimized air exposure is n-type, irrespective of the metal contact type. The fabricated n-FETs with palladium contact can reach electron currents up to 275 μA/μm at = 2 V. For p-FETs, we introduce a novel nitric oxide doping strategy, allowing a controlled transition of MoTe FETs from n-type to unipolar p-type. By doping only in the contact region, we demonstrate hole currents up to 170 μA/μm at = -2 V with preserved / ratios of 10. Finally, we present a complementary inverter circuit comprising the high-performance n- and p-type FETs based on MoTe, promoting the application of 2D materials in future electronic systems.